Abstract
This work presents a Si-based approach to develop high-speed devices for broadband communication applications. SiGe HBTs with fT and fmax of 375GHz and 210GHz, respectively, are reported. The achieved fT of 375GHz is the highest reported value for any Si-based transistor and also for any bipolar transistor. Associated BVCEO and BVCBO are 1.4V and 5.0V, respectively. The device structure and process steps are described highlighting the differences from III-V technologies, and the impact of layout configuration and device dimension on the device performance is discussed.
Original language | English |
---|---|
Pages (from-to) | 374-377 |
Number of pages | 4 |
Journal | Conference Proceedings - International Conference on Indium Phosphide and Related Materials |
Publication status | Published - 2003 |
Externally published | Yes |
Event | 2003 International Conference Indium Phosphide and Related Materials - Santa Barbara, CA, United States Duration: 2003 May 12 → 2003 May 16 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering