Performance and design considerations for high speed SiGe HBTs of fT/fmax=375GHz/210GHz

Jae Sung Rieh, Basanth Jagannathan, Huajie Chen, Kathryn Schonenberg, Shwu Jen Jeng, Marwan Khater, David Ahlgren, Greg Freeman, Seshadri Subbanna

Research output: Contribution to journalConference articlepeer-review

45 Citations (Scopus)


This work presents a Si-based approach to develop high-speed devices for broadband communication applications. SiGe HBTs with fT and fmax of 375GHz and 210GHz, respectively, are reported. The achieved fT of 375GHz is the highest reported value for any Si-based transistor and also for any bipolar transistor. Associated BVCEO and BVCBO are 1.4V and 5.0V, respectively. The device structure and process steps are described highlighting the differences from III-V technologies, and the impact of layout configuration and device dimension on the device performance is discussed.

Original languageEnglish
Pages (from-to)374-377
Number of pages4
JournalConference Proceedings - International Conference on Indium Phosphide and Related Materials
Publication statusPublished - 2003
Externally publishedYes
Event2003 International Conference Indium Phosphide and Related Materials - Santa Barbara, CA, United States
Duration: 2003 May 122003 May 16

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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