Performance and design considerations for high speed SiGe HBTs of fT/fmax=375GHz/210GHz

Jae Sung Rieh; Basanth Jagannathan; Huajie Chen; Kathryn Schonenberg; Shwu Jen Jeng; Marwan Khater; David Ahlgren; Greg Freeman; Seshadri Subbanna

Performance and design considerations for high speed SiGe HBTs of f_T/f_max=375GHz/210GHz

Jae Sung Rieh, Basanth Jagannathan, Huajie Chen, Kathryn Schonenberg, Shwu Jen Jeng, Marwan Khater, David Ahlgren, Greg Freeman, Seshadri Subbanna

Research output: Contribution to journal › Conference article › peer-review

45 Citations (Scopus)

Abstract

This work presents a Si-based approach to develop high-speed devices for broadband communication applications. SiGe HBTs with f_T and f_max of 375GHz and 210GHz, respectively, are reported. The achieved f_T of 375GHz is the highest reported value for any Si-based transistor and also for any bipolar transistor. Associated BV_CEO and BV_CBO are 1.4V and 5.0V, respectively. The device structure and process steps are described highlighting the differences from III-V technologies, and the impact of layout configuration and device dimension on the device performance is discussed.

Original language	English
Pages (from-to)	374-377
Number of pages	4
Journal	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
Publication status	Published - 2003
Externally published	Yes
Event	2003 International Conference Indium Phosphide and Related Materials - Santa Barbara, CA, United States Duration: 2003 May 12 → 2003 May 16

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

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title = "Performance and design considerations for high speed SiGe HBTs of fT/fmax=375GHz/210GHz",

abstract = "This work presents a Si-based approach to develop high-speed devices for broadband communication applications. SiGe HBTs with fT and fmax of 375GHz and 210GHz, respectively, are reported. The achieved fT of 375GHz is the highest reported value for any Si-based transistor and also for any bipolar transistor. Associated BVCEO and BVCBO are 1.4V and 5.0V, respectively. The device structure and process steps are described highlighting the differences from III-V technologies, and the impact of layout configuration and device dimension on the device performance is discussed.",

author = "Rieh, {Jae Sung} and Basanth Jagannathan and Huajie Chen and Kathryn Schonenberg and Jeng, {Shwu Jen} and Marwan Khater and David Ahlgren and Greg Freeman and Seshadri Subbanna",

year = "2003",

language = "English",

pages = "374--377",

journal = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

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note = "2003 International Conference Indium Phosphide and Related Materials ; Conference date: 12-05-2003 Through 16-05-2003",

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T1 - Performance and design considerations for high speed SiGe HBTs of fT/fmax=375GHz/210GHz

AU - Rieh, Jae Sung

AU - Jagannathan, Basanth

AU - Chen, Huajie

AU - Schonenberg, Kathryn

AU - Jeng, Shwu Jen

AU - Khater, Marwan

AU - Ahlgren, David

AU - Freeman, Greg

AU - Subbanna, Seshadri

PY - 2003

Y1 - 2003

N2 - This work presents a Si-based approach to develop high-speed devices for broadband communication applications. SiGe HBTs with fT and fmax of 375GHz and 210GHz, respectively, are reported. The achieved fT of 375GHz is the highest reported value for any Si-based transistor and also for any bipolar transistor. Associated BVCEO and BVCBO are 1.4V and 5.0V, respectively. The device structure and process steps are described highlighting the differences from III-V technologies, and the impact of layout configuration and device dimension on the device performance is discussed.

AB - This work presents a Si-based approach to develop high-speed devices for broadband communication applications. SiGe HBTs with fT and fmax of 375GHz and 210GHz, respectively, are reported. The achieved fT of 375GHz is the highest reported value for any Si-based transistor and also for any bipolar transistor. Associated BVCEO and BVCBO are 1.4V and 5.0V, respectively. The device structure and process steps are described highlighting the differences from III-V technologies, and the impact of layout configuration and device dimension on the device performance is discussed.

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M3 - Conference article

AN - SCOPUS:0038148529

SN - 1092-8669

SP - 374

EP - 377

JO - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

JF - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

T2 - 2003 International Conference Indium Phosphide and Related Materials

Y2 - 12 May 2003 through 16 May 2003

ER -

Performance and design considerations for high speed SiGe HBTs of f_T/f_max=375GHz/210GHz

Abstract

ASJC Scopus subject areas

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