Performance characterization of a silicon drift detector for gamma ray imaging

Jinhun Joung, Kisung Lee, Young Bok Ahn, Jong Hee Lee, Jihoon Kang, Jae Kuk Moon, Debora Henseler, Wilhelm Metzger, Matthias Schmand

Research output: Contribution to journalArticlepeer-review

Abstract

This study examined the intrinsic performance of silicon drift detector (SDD)-based gamma detectors under a variety of conditions. The prototype detector consisted of an array of seven hexagon-shaped SDDs optically coupled to a single slab of a scintillator. The active area of the SDD sensor was 15.2 mm in diameter, as measured from one vertex to another. The detector unit (SDD array, scintillator and preamplifier circuits) was operated in a cooling chamber with a typical operating temperature of -20 °C. Nitrogen gas was supplied to the detector unit to prevent condensation. The drift time was measured using a LED pulse generation device and the longest drift time was measured to be 4.6 μsec from the edge of the sensor. The intrinsic energy resolution with a 55Fe source for direct X-ray conversion was 3% at the 5.9 keV peak. For indirect conversion, i.e. photon detection, the energy resolution for CsI(Tl) and NaΙ(Tl) was 7.9% and 8.2% with a 13 μsec and 2.71 μsec shaping time, respectively. For this indirect conversion measurement, the temperature was set to -20 °C and a 1 × 1 × 1 cm3 cube scintillator was coupled directly to the sensor. For the intrinsic spatial resolution measurement with a hole-phantom (3 × 2 mm diameter holes), the x and y directional profiles at a center hole were 2.2 and 2.1 mm in FWHM, respectively. Overall, the intrinsic performance of the SDD prototype is quite promising and advantages of this technology makes it highly feasible for use as a gamma ray detector.

Original languageEnglish
Article number5485140
Pages (from-to)931-937
Number of pages7
JournalIEEE Transactions on Nuclear Science
Volume57
Issue number3 PART 1
DOIs
Publication statusPublished - 2010 Jun

Bibliographical note

Funding Information:
Manuscript received January 12, 2009; revised September 12, 2009; accepted November 30, 2009. Date of current version June 16, 2010. This work was supported by a grant of the Industrial Source Technology Development Programs, the Ministry of Knowledge Economy (No. 10024198), Republic of Korea. J. Joung is with the Research Institute of Health Sciences, Korea University, Seoul, 136-703, Korea. K. Lee is with the Department of Radiologic Science, Korea University, Seoul, 136-703, Korea (e-mail: kisung@korea.ac.kr). Y. B. Ahn is with the Department of Electronics, Konkuk University, Seoul 143-701, Korea. J. H. Lee and J. K. Moon are with Osteosys, Inc., Seoul 152-050, Korea. J. Kang is with the Department of Nuclear Medicine, Samsung Medical Center, Sungkyunkwan University, School of Medicine, Seoul 135-710, Korea. D. Henseler and M. Schmand are with the Molecular Imaging Division, Siemens Medical Solutions USA, Inc., Hoffman Estates, IL 60195 USA. W. Metzger is with Siemens AG Corporate Technology, 81379 Munich, Germany. Digital Object Identifier 10.1109/TNS.2009.2038696

Keywords

  • Gamma camera
  • High resolution
  • Positioning scheme
  • Silicon drift detector
  • Solid-state detector

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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