Performance evaluation of 7nm n-type germanium junctionless field-effect-transistor with metal-interlayer-semiconductor source/drain structure

Seung Geun Jung; Hyun-Yong Yu

doi:10.1109/EDSSC.2017.8126520

Performance evaluation of 7nm n-type germanium junctionless field-effect-transistor with metal-interlayer-semiconductor source/drain structure

Seung Geun Jung, Hyun-Yong Yu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

In this study, the impact of Metal-Interlayer-Semiconductor Source/Drain (MIS S/D) structure on enhancement mode 7nm n-type germanium (Ge) junctionless FET (JLFET) is demonstrated with Sentaurus 3-D technology computer-aided design (TCAD). The device using MS S/D structure cannot operate for normally-off mode because of severe Fermi-level pinning (FLP) and using MIS S/D structure can be a solution by alleviating the FLP. We compared performances of the normally-off JLFET models which include MIS S/D, conventional metal-semiconductor S/D (MS S/D) and unpinned metal-semiconductor S/D (unpinned MS S/D) structures. The MIS S/D structure provides on-state current of 6.09 × 10^-4 A/um and contact resistivity of 3 × 10^-9Ω-cm². We also analyzed the MIS S/D JLFET by different doping concentrations.

Original language	English
Title of host publication	EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1-2
Number of pages	2
Volume	2017-January
ISBN (Electronic)	9781538629079
DOIs	https://doi.org/10.1109/EDSSC.2017.8126520
Publication status	Published - 2017 Dec 1
Event	13th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2017 - Hsinchu, Taiwan, Province of China Duration: 2017 Oct 18 → 2017 Oct 20

Other

Other	13th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2017
Country/Territory	Taiwan, Province of China
City	Hsinchu
Period	17/10/18 → 17/10/20

Keywords

3-D TCAD simulation
CMOS
Germanium
Interlayer
Juntionless FET

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/EDSSC.2017.8126520

Cite this

Jung, S. G., & Yu, H.-Y. (2017). Performance evaluation of 7nm n-type germanium junctionless field-effect-transistor with metal-interlayer-semiconductor source/drain structure. In EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits (Vol. 2017-January, pp. 1-2). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDSSC.2017.8126520

Performance evaluation of 7nm n-type germanium junctionless field-effect-transistor with metal-interlayer-semiconductor source/drain structure. / Jung, Seung Geun; Yu, Hyun-Yong.
EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits. Vol. 2017-January Institute of Electrical and Electronics Engineers Inc., 2017. p. 1-2.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Jung, SG & Yu, H-Y 2017, Performance evaluation of 7nm n-type germanium junctionless field-effect-transistor with metal-interlayer-semiconductor source/drain structure. in EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits. vol. 2017-January, Institute of Electrical and Electronics Engineers Inc., pp. 1-2, 13th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2017, Hsinchu, Taiwan, Province of China, 17/10/18. https://doi.org/10.1109/EDSSC.2017.8126520

Jung SG, Yu HY. Performance evaluation of 7nm n-type germanium junctionless field-effect-transistor with metal-interlayer-semiconductor source/drain structure. In EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits. Vol. 2017-January. Institute of Electrical and Electronics Engineers Inc. 2017. p. 1-2 doi: 10.1109/EDSSC.2017.8126520

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abstract = "In this study, the impact of Metal-Interlayer-Semiconductor Source/Drain (MIS S/D) structure on enhancement mode 7nm n-type germanium (Ge) junctionless FET (JLFET) is demonstrated with Sentaurus 3-D technology computer-aided design (TCAD). The device using MS S/D structure cannot operate for normally-off mode because of severe Fermi-level pinning (FLP) and using MIS S/D structure can be a solution by alleviating the FLP. We compared performances of the normally-off JLFET models which include MIS S/D, conventional metal-semiconductor S/D (MS S/D) and unpinned metal-semiconductor S/D (unpinned MS S/D) structures. The MIS S/D structure provides on-state current of 6.09 × 10-4 A/um and contact resistivity of 3 × 10-9Ω-cm2. We also analyzed the MIS S/D JLFET by different doping concentrations.",

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N2 - In this study, the impact of Metal-Interlayer-Semiconductor Source/Drain (MIS S/D) structure on enhancement mode 7nm n-type germanium (Ge) junctionless FET (JLFET) is demonstrated with Sentaurus 3-D technology computer-aided design (TCAD). The device using MS S/D structure cannot operate for normally-off mode because of severe Fermi-level pinning (FLP) and using MIS S/D structure can be a solution by alleviating the FLP. We compared performances of the normally-off JLFET models which include MIS S/D, conventional metal-semiconductor S/D (MS S/D) and unpinned metal-semiconductor S/D (unpinned MS S/D) structures. The MIS S/D structure provides on-state current of 6.09 × 10-4 A/um and contact resistivity of 3 × 10-9Ω-cm2. We also analyzed the MIS S/D JLFET by different doping concentrations.

AB - In this study, the impact of Metal-Interlayer-Semiconductor Source/Drain (MIS S/D) structure on enhancement mode 7nm n-type germanium (Ge) junctionless FET (JLFET) is demonstrated with Sentaurus 3-D technology computer-aided design (TCAD). The device using MS S/D structure cannot operate for normally-off mode because of severe Fermi-level pinning (FLP) and using MIS S/D structure can be a solution by alleviating the FLP. We compared performances of the normally-off JLFET models which include MIS S/D, conventional metal-semiconductor S/D (MS S/D) and unpinned metal-semiconductor S/D (unpinned MS S/D) structures. The MIS S/D structure provides on-state current of 6.09 × 10-4 A/um and contact resistivity of 3 × 10-9Ω-cm2. We also analyzed the MIS S/D JLFET by different doping concentrations.

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Performance evaluation of 7nm n-type germanium junctionless field-effect-transistor with metal-interlayer-semiconductor source/drain structure

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Keywords

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