Performance improvement of 650 nm band AlGaInP laser diodes with optimal diffusion barriers

Young Chul Shin; Bum Jun Kim; Dong Hoon Kang; Young Min Kim; Tae Geun Kim

doi:10.1016/j.mseb.2005.11.016

Performance improvement of 650 nm band AlGaInP laser diodes with optimal diffusion barriers

Young Chul Shin, Bum Jun Kim, Dong Hoon Kang, Young Min Kim, Tae Geun Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

GaInP/AlGaInP multiple quantum-well (MQW) laser diodes with diffusion barriers for Zn, grown by metal organic chemical vapor deposition (MOCVD), were fabricated and characterized. To determine the optimal conditions for the diffusion barriers, we investigated Zn diffusion in the GaInP/(Al _0.5Ga_0.5)_0.5In_0.5P MQW layers against three undoped (Al_0.7Ga_0.3)_0.5In _0.5P diffusion barriers with thicknesses of 0, 90, and 130 nm, respectively, by secondary ion mass spectroscopy (SIMS). Compared to the reference AlGaInP laser diode without a diffusion barrier, the AlGaInP ridge laser with a 130 nm thick diffusion barrier on the top of the MQW layer had a threshold current that was greatly reduced from 110 to 75 mA and the characteristic temperature T_o that was increased from 113 to 144 K in the temperature range from 25 to 50 °C. This report presents quantitative information on the effect of Zn diffusion on laser performance.

Original language	English
Pages (from-to)	80-82
Number of pages	3
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	128
Issue number	1-3
DOIs	https://doi.org/10.1016/j.mseb.2005.11.016
Publication status	Published - 2006 Mar 15

Bibliographical note

Funding Information:
The authors would like to thank Jeong Yeon Won of Samsung Advanced Institute of Technology for SIMS measurements. This work was also partly supported by KOSEF through q- P si at Hanyang University, Korea.

Keywords

650 Nm band laser
Diffusion barrier
MOCVD
SIMS
Zn diffusion
Zn-doped (AlGa) InP

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/j.mseb.2005.11.016

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@article{f7fc3579f4124419a969276a3558d009,

title = "Performance improvement of 650 nm band AlGaInP laser diodes with optimal diffusion barriers",

abstract = "GaInP/AlGaInP multiple quantum-well (MQW) laser diodes with diffusion barriers for Zn, grown by metal organic chemical vapor deposition (MOCVD), were fabricated and characterized. To determine the optimal conditions for the diffusion barriers, we investigated Zn diffusion in the GaInP/(Al 0.5Ga0.5)0.5In0.5P MQW layers against three undoped (Al0.7Ga0.3)0.5In 0.5P diffusion barriers with thicknesses of 0, 90, and 130 nm, respectively, by secondary ion mass spectroscopy (SIMS). Compared to the reference AlGaInP laser diode without a diffusion barrier, the AlGaInP ridge laser with a 130 nm thick diffusion barrier on the top of the MQW layer had a threshold current that was greatly reduced from 110 to 75 mA and the characteristic temperature To that was increased from 113 to 144 K in the temperature range from 25 to 50 °C. This report presents quantitative information on the effect of Zn diffusion on laser performance.",

keywords = "650 Nm band laser, Diffusion barrier, MOCVD, SIMS, Zn diffusion, Zn-doped (AlGa) InP",

author = "Shin, {Young Chul} and Kim, {Bum Jun} and Kang, {Dong Hoon} and Kim, {Young Min} and Kim, {Tae Geun}",

note = "Funding Information: The authors would like to thank Jeong Yeon Won of Samsung Advanced Institute of Technology for SIMS measurements. This work was also partly supported by KOSEF through q- P si at Hanyang University, Korea. ",

year = "2006",

month = mar,

day = "15",

doi = "10.1016/j.mseb.2005.11.016",

language = "English",

volume = "128",

pages = "80--82",

journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",

issn = "0921-5107",

publisher = "Elsevier BV",

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T1 - Performance improvement of 650 nm band AlGaInP laser diodes with optimal diffusion barriers

AU - Shin, Young Chul

AU - Kim, Bum Jun

AU - Kang, Dong Hoon

AU - Kim, Young Min

AU - Kim, Tae Geun

N1 - Funding Information: The authors would like to thank Jeong Yeon Won of Samsung Advanced Institute of Technology for SIMS measurements. This work was also partly supported by KOSEF through q- P si at Hanyang University, Korea.

PY - 2006/3/15

Y1 - 2006/3/15

N2 - GaInP/AlGaInP multiple quantum-well (MQW) laser diodes with diffusion barriers for Zn, grown by metal organic chemical vapor deposition (MOCVD), were fabricated and characterized. To determine the optimal conditions for the diffusion barriers, we investigated Zn diffusion in the GaInP/(Al 0.5Ga0.5)0.5In0.5P MQW layers against three undoped (Al0.7Ga0.3)0.5In 0.5P diffusion barriers with thicknesses of 0, 90, and 130 nm, respectively, by secondary ion mass spectroscopy (SIMS). Compared to the reference AlGaInP laser diode without a diffusion barrier, the AlGaInP ridge laser with a 130 nm thick diffusion barrier on the top of the MQW layer had a threshold current that was greatly reduced from 110 to 75 mA and the characteristic temperature To that was increased from 113 to 144 K in the temperature range from 25 to 50 °C. This report presents quantitative information on the effect of Zn diffusion on laser performance.

AB - GaInP/AlGaInP multiple quantum-well (MQW) laser diodes with diffusion barriers for Zn, grown by metal organic chemical vapor deposition (MOCVD), were fabricated and characterized. To determine the optimal conditions for the diffusion barriers, we investigated Zn diffusion in the GaInP/(Al 0.5Ga0.5)0.5In0.5P MQW layers against three undoped (Al0.7Ga0.3)0.5In 0.5P diffusion barriers with thicknesses of 0, 90, and 130 nm, respectively, by secondary ion mass spectroscopy (SIMS). Compared to the reference AlGaInP laser diode without a diffusion barrier, the AlGaInP ridge laser with a 130 nm thick diffusion barrier on the top of the MQW layer had a threshold current that was greatly reduced from 110 to 75 mA and the characteristic temperature To that was increased from 113 to 144 K in the temperature range from 25 to 50 °C. This report presents quantitative information on the effect of Zn diffusion on laser performance.

KW - 650 Nm band laser

KW - Diffusion barrier

KW - MOCVD

KW - SIMS

KW - Zn diffusion

KW - Zn-doped (AlGa) InP

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JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

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ER -

Performance improvement of 650 nm band AlGaInP laser diodes with optimal diffusion barriers

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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