Performance improvement of Sb 2S 3-sensitized solar cell by introducing hole buffer layer in cobalt complex electrolyte

Sang Hyuk Im; Hi Jung Kim; Jae Hui Rhee; Choong Sun Lim; Sang Il Seok

doi:10.1039/c0ee00741b

Performance improvement of Sb ₂S ₃-sensitized solar cell by introducing hole buffer layer in cobalt complex electrolyte

Sang Hyuk Im, Hi Jung Kim, Jae Hui Rhee, Choong Sun Lim, Sang Il Seok^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

54 Citations (Scopus)

Abstract

We found that the insertion of the poly-3-hexylthiophene (P3HT) layer into the pristine device results in great improvement of the efficiency, from 2.0% to 3.3% at 1 sun illumination. The improvement was mainly attributed to the improved fill factor, which for the Sb ₂S ₃ sensitized solar cell was seriously degraded from 56.0% (at 0.1 sun) to 31.5% (at 1 sun), whereas the fill factor of the Sb ₂S ₃/P3HT sensitized solar cell was only moderately degraded, from 59.3% (at 0.1 sun) to 40.4%. The role of P3HT as a hole buffer layer was analyzed by electrochemical impedance spectroscopy (EIS).

Original language	English
Pages (from-to)	2799-2802
Number of pages	4
Journal	Energy and Environmental Science
Volume	4
Issue number	8
DOIs	https://doi.org/10.1039/c0ee00741b
Publication status	Published - 2011 Aug
Externally published	Yes

ASJC Scopus subject areas

Environmental Chemistry
Renewable Energy, Sustainability and the Environment
Nuclear Energy and Engineering
Pollution

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1039/c0ee00741b

Cite this

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title = "Performance improvement of Sb 2S 3-sensitized solar cell by introducing hole buffer layer in cobalt complex electrolyte",

abstract = "We found that the insertion of the poly-3-hexylthiophene (P3HT) layer into the pristine device results in great improvement of the efficiency, from 2.0\% to 3.3\% at 1 sun illumination. The improvement was mainly attributed to the improved fill factor, which for the Sb 2S 3 sensitized solar cell was seriously degraded from 56.0\% (at 0.1 sun) to 31.5\% (at 1 sun), whereas the fill factor of the Sb 2S 3/P3HT sensitized solar cell was only moderately degraded, from 59.3\% (at 0.1 sun) to 40.4\%. The role of P3HT as a hole buffer layer was analyzed by electrochemical impedance spectroscopy (EIS).",

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AU - Im, Sang Hyuk

AU - Kim, Hi Jung

AU - Rhee, Jae Hui

AU - Lim, Choong Sun

AU - Seok, Sang Il

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AB - We found that the insertion of the poly-3-hexylthiophene (P3HT) layer into the pristine device results in great improvement of the efficiency, from 2.0% to 3.3% at 1 sun illumination. The improvement was mainly attributed to the improved fill factor, which for the Sb 2S 3 sensitized solar cell was seriously degraded from 56.0% (at 0.1 sun) to 31.5% (at 1 sun), whereas the fill factor of the Sb 2S 3/P3HT sensitized solar cell was only moderately degraded, from 59.3% (at 0.1 sun) to 40.4%. The role of P3HT as a hole buffer layer was analyzed by electrochemical impedance spectroscopy (EIS).

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