Performance improvements in AlGaN-based ultraviolet light-emitting diodes due to electrical doping effects

Kyeong Heon Kim, Tae Ho Lee, Kyung Rock Son, Tae Geun Kim

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


We report a new doping method for the fabrication of wide-bandgap (WB) semiconductors such as p-AlGaN using electric fields and the application of this method to AlGaN-based UV light-emitting diodes (LEDs) to evaluate its effect at the device level. We prepared four LED samples with different work function (WF) energies using Pt, Ni, Ti, or Mg as contact metals and applied electric fields between these metals and the p-AlGaN surface across indium-doped tin oxide (ITO)/AlN thin films to facilitate diffusion of the metal atoms into the p-AlGaN layer. Compared to the samples with reference ITO electrodes (10 or 100 nm), ohmic behavior on the p-AlGaN surface was improved in the samples doped with Pt, Ni (high WF), and Mg (low WF but shallow dopant), but not for the sample doped with Ti (low WF). Furthermore, Mg-doped samples exhibited the lowest contact resistance with reasonably high transmittance among the four samples; accordingly, the lowest forward voltage and highest light-output power were achieved with UV LEDs using ITO/AlN/Mg electrodes. This electrical doping method could be useful for WB semiconductors fabricated with materials such as p-AlGaN and p-ZnO, which are difficult to dope using either thermal or optical doping method.

Original languageEnglish
Pages (from-to)94-103
Number of pages10
JournalMaterials and Design
Publication statusPublished - 2018 Sept 5


  • Conducting filaments
  • Electrical breakdown method
  • Light-emitting diodes
  • Transparent conductive electrodes
  • Ultraviolet

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering


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