Keyphrases
GaN-based Light-emitting Diodes
100%
Performance Improvement
100%
Doping Effect
100%
P-AlGaN
100%
Electrical Doping
100%
Doping Method
60%
Indium-doped Tin Oxide
60%
Ultraviolet Light-emitting Diode (UV-LED)
40%
Low Work Function
40%
Wide Band Gap Semiconductors
40%
PtNi
40%
Light-emitting Diodes
20%
Electric Field (E-field)
20%
Dopant
20%
Forward Voltage
20%
Light Output
20%
Ohmic Behavior
20%
Work Function
20%
High Work Function
20%
Applied Electric Field
20%
Aluminum Gallium Nitride (AlGaN)
20%
Mg Doping
20%
High Transmittance
20%
Tin Electrodes
20%
Metal Atoms
20%
Low Contact Resistance
20%
Device Level
20%
P-type ZnO
20%
NiTi
20%
AlGaN Layer
20%
AlN Thin Film
20%
Contact Metal
20%
Thermal Doping
20%
Optical Doping
20%
Engineering
Light-Emitting Diode
100%
Ultraviolet Light
100%
Performance Improvement
100%
Wide Bandgap Semiconductor
50%
Thin Films
25%
Highlight
25%
Dopants
25%
Forward Voltage
25%
Light Output Power
25%
Metal Contact
25%
Applied Electric Field
25%
Metal Atom
25%
Energy Function
25%
Electric Field
25%
Material Science
Light-Emitting Diode
100%
Tin Oxide
75%
Indium
75%
Aluminum Nitride
50%
Surface (Surface Science)
50%
Wide Bandgap Semiconductor
50%
Thin Films
25%
ZnO
25%
Doping (Additives)
25%
Contact Resistance
25%
Chemical Engineering
Tin Oxide
100%
Indium
100%
Film
33%