Abstract
Lasing from the ground state electron and heavy-hole (1e-1hh) transition of the semiconductor quantum wire (QWR) was achieved in the temperature range of 4.5 K to 300 K, with AlGaAs/GaAs multiple QWR structures grown by flow rate modulation epitaxy (FME). One of the lasers with cavity length of 350 μm showed fundamental transverse mode, a typical threshold current of 5 mA, ultrahigh characteristic temperature T0 ∼ 322 K above room temperature, and strikingly little wavelength shift (<0.2 nm/K) in emission spectra.
Original language | English |
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Pages (from-to) | S379-S382 |
Journal | Journal of the Korean Physical Society |
Volume | 42 |
Issue number | SPEC. |
Publication status | Published - 2003 Feb |
Externally published | Yes |
Event | Proceedings of The 11th Seoul International Symposium on the Physics of Semiconductors and Apllications - 2002 - Cheju Island, Korea, Republic of Duration: 2002 Aug 20 → 2002 Aug 23 |
Keywords
- Lasers
- Semiconductor quantum wires
ASJC Scopus subject areas
- General Physics and Astronomy