GaAs-AlGaAs V-grooved inner stripe (VIS) quantum-well wire (QWW) lasers grown by metalorganic chemical vapor deposition with different current blocking configurations. n-blocking on p-substrate (VIPS). p-n-p-n blocking on n-substrate (VI(PN) nS) and p-blocking on n-substrate (VINS) have been fabricated and characterized. The VIPS QWW lasers show the most stable characteristics with effective current confinement: one of the lasers shows fundamental transverse mode, lasing up to 5 mW/facet, typical threshold current of 39.9 mA at 818.5 nm, an external differential quantum efficiency of 24%/facet, and characteristic temperature of 92 K. The current tuning rate was almost linear at 0.031 nm/mA, and the temperature tuning rate was measured to be 0.14 nm/°C. Comparison of the light output versus current characteristics of the lasers with different current blocking configurations is presented here.
Bibliographical noteFunding Information:
Manuscript received December 5, 1997; revised April 20, 1998. This work was suppported in part by the Korea Institute of Science and Technology (KIST). The work of T. G. Kim was supported by the Korea Research Foundation.
- Epitaxial growth
- Quantum-well wire laser
- Stimulated emission
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering