Performance of GaAs-AlGaAs V-grooved inner stripe quantum-well wire lasers with different current blocking configurations

Tae Geun Kim; Kyung Hyun Park; Sung Min Hwang; Yong Kim; Eun Kyu Kim; Suk Ki Min; Si Jeong Leem; Jong Il Jeon; Jung Ho Park; William S.C. Chang

doi:10.1109/3.704342

Performance of GaAs-AlGaAs V-grooved inner stripe quantum-well wire lasers with different current blocking configurations

Tae Geun Kim, Kyung Hyun Park, Sung Min Hwang, Yong Kim, Eun Kyu Kim, Suk Ki Min, Si Jeong Leem, Jong Il Jeon, Jung Ho Park, William S.C. Chang

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

GaAs-AlGaAs V-grooved inner stripe (VIS) quantum-well wire (QWW) lasers grown by metalorganic chemical vapor deposition with different current blocking configurations. n-blocking on p-substrate (VIPS). p-n-p-n blocking on n-substrate (VI(PN) _nS) and p-blocking on n-substrate (VINS) have been fabricated and characterized. The VIPS QWW lasers show the most stable characteristics with effective current confinement: one of the lasers shows fundamental transverse mode, lasing up to 5 mW/facet, typical threshold current of 39.9 mA at 818.5 nm, an external differential quantum efficiency of 24%/facet, and characteristic temperature of 92 K. The current tuning rate was almost linear at 0.031 nm/mA, and the temperature tuning rate was measured to be 0.14 nm/°C. Comparison of the light output versus current characteristics of the lasers with different current blocking configurations is presented here.

Original language	English
Pages (from-to)	1461-1467
Number of pages	7
Journal	IEEE Journal of Quantum Electronics
Volume	34
Issue number	8
DOIs	https://doi.org/10.1109/3.704342
Publication status	Published - 1998 Aug

Bibliographical note

Funding Information:
Manuscript received December 5, 1997; revised April 20, 1998. This work was suppported in part by the Korea Institute of Science and Technology (KIST). The work of T. G. Kim was supported by the Korea Research Foundation.

Keywords

Epitaxial growth
Lasers
Quantum-well wire laser
Stimulated emission

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/3.704342

Cite this

@article{26be04fe91b840e3a42fbd5472d4948f,

title = "Performance of GaAs-AlGaAs V-grooved inner stripe quantum-well wire lasers with different current blocking configurations",

abstract = "GaAs-AlGaAs V-grooved inner stripe (VIS) quantum-well wire (QWW) lasers grown by metalorganic chemical vapor deposition with different current blocking configurations. n-blocking on p-substrate (VIPS). p-n-p-n blocking on n-substrate (VI(PN) nS) and p-blocking on n-substrate (VINS) have been fabricated and characterized. The VIPS QWW lasers show the most stable characteristics with effective current confinement: one of the lasers shows fundamental transverse mode, lasing up to 5 mW/facet, typical threshold current of 39.9 mA at 818.5 nm, an external differential quantum efficiency of 24%/facet, and characteristic temperature of 92 K. The current tuning rate was almost linear at 0.031 nm/mA, and the temperature tuning rate was measured to be 0.14 nm/°C. Comparison of the light output versus current characteristics of the lasers with different current blocking configurations is presented here.",

keywords = "Epitaxial growth, Lasers, Quantum-well wire laser, Stimulated emission",

author = "Kim, {Tae Geun} and Park, {Kyung Hyun} and Hwang, {Sung Min} and Yong Kim and Kim, {Eun Kyu} and Min, {Suk Ki} and Leem, {Si Jeong} and Jeon, {Jong Il} and Park, {Jung Ho} and Chang, {William S.C.}",

note = "Funding Information: Manuscript received December 5, 1997; revised April 20, 1998. This work was suppported in part by the Korea Institute of Science and Technology (KIST). The work of T. G. Kim was supported by the Korea Research Foundation.",

year = "1998",

month = aug,

doi = "10.1109/3.704342",

language = "English",

volume = "34",

pages = "1461--1467",

journal = "IEEE Journal of Quantum Electronics",

issn = "0018-9197",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "8",

}

TY - JOUR

T1 - Performance of GaAs-AlGaAs V-grooved inner stripe quantum-well wire lasers with different current blocking configurations

AU - Kim, Tae Geun

AU - Park, Kyung Hyun

AU - Hwang, Sung Min

AU - Kim, Yong

AU - Kim, Eun Kyu

AU - Min, Suk Ki

AU - Leem, Si Jeong

AU - Jeon, Jong Il

AU - Park, Jung Ho

AU - Chang, William S.C.

N1 - Funding Information: Manuscript received December 5, 1997; revised April 20, 1998. This work was suppported in part by the Korea Institute of Science and Technology (KIST). The work of T. G. Kim was supported by the Korea Research Foundation.

PY - 1998/8

Y1 - 1998/8

N2 - GaAs-AlGaAs V-grooved inner stripe (VIS) quantum-well wire (QWW) lasers grown by metalorganic chemical vapor deposition with different current blocking configurations. n-blocking on p-substrate (VIPS). p-n-p-n blocking on n-substrate (VI(PN) nS) and p-blocking on n-substrate (VINS) have been fabricated and characterized. The VIPS QWW lasers show the most stable characteristics with effective current confinement: one of the lasers shows fundamental transverse mode, lasing up to 5 mW/facet, typical threshold current of 39.9 mA at 818.5 nm, an external differential quantum efficiency of 24%/facet, and characteristic temperature of 92 K. The current tuning rate was almost linear at 0.031 nm/mA, and the temperature tuning rate was measured to be 0.14 nm/°C. Comparison of the light output versus current characteristics of the lasers with different current blocking configurations is presented here.

AB - GaAs-AlGaAs V-grooved inner stripe (VIS) quantum-well wire (QWW) lasers grown by metalorganic chemical vapor deposition with different current blocking configurations. n-blocking on p-substrate (VIPS). p-n-p-n blocking on n-substrate (VI(PN) nS) and p-blocking on n-substrate (VINS) have been fabricated and characterized. The VIPS QWW lasers show the most stable characteristics with effective current confinement: one of the lasers shows fundamental transverse mode, lasing up to 5 mW/facet, typical threshold current of 39.9 mA at 818.5 nm, an external differential quantum efficiency of 24%/facet, and characteristic temperature of 92 K. The current tuning rate was almost linear at 0.031 nm/mA, and the temperature tuning rate was measured to be 0.14 nm/°C. Comparison of the light output versus current characteristics of the lasers with different current blocking configurations is presented here.

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KW - Quantum-well wire laser

KW - Stimulated emission

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Performance of GaAs-AlGaAs V-grooved inner stripe quantum-well wire lasers with different current blocking configurations

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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