Performance of InGaN/AlGaInN near-UV LEDs with Ni/Ga2O3/Ag/Ga2O3 electrode

Kie Young Woo, Kyeong Heon Kim, Tae Geun Kim

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


We fabricated Ga2O3-based transparent conductive electrodes (TCEs) for use in near-ultraviolet (NUV) lightemitting diodes (LEDs) by embedding metal layers into Ga2O3. We employ Ni and Ag layers to improve current injection and spreading properties. Our fabricated Ni/Ga2O3/Ag/Ga2O3 multilayer (annealed at 600 °C, 1 min) deposited on an NUV LED wafer exhibits 83% transmittance at 385 nm with a specific contact resistance of 8 × 10-3 Ω • cm2. An NUV LED fabricated with a Ni/Ga2O3/Ag/Ga2O3 TCE exhibits a 17% increase in light output power at 150 mA and a 3.2% decrease in forward voltage at 20 mA over those of an indium tin oxide NUV LED.

Original languageEnglish
Pages (from-to)67-70
Number of pages4
JournalIEEE Photonics Technology Letters
Issue number1
Publication statusPublished - 2015 Sept 22

Bibliographical note

Publisher Copyright:
© 2015 IEEE.


  • Gallium nitride
  • Transparent conductive electrode
  • Ultraviolet light-emitting diode

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering


Dive into the research topics of 'Performance of InGaN/AlGaInN near-UV LEDs with Ni/Ga2O3/Ag/Ga2O3 electrode'. Together they form a unique fingerprint.

Cite this