Performance of InGaN/GaN-based light emitting diodes fabricated with zno nanorods

Ki Seok Kim; Sungjoo Song; Tae Yeon Seong

doi:10.1149/08507.0003ecst

Performance of InGaN/GaN-based light emitting diodes fabricated with zno nanorods

Ki Seok Kim, Sungjoo Song, Tae Yeon Seong

Department of Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

ZnO nanorod arrays grown by a simple non-catalytic polymer-template wet-chemical growth method were incorporated into blue InGaN-based LEDs to enhance the light extraction efficiency (LEE). Two types of ZnO nanorods, such as well-aligned ZnO nanorods (WAZNR) and not-well-aligned ZnO nanorods (NAZNR) were employed and compared with ITO-only electrodes. LEDs fabricated with WAZNR showed higher electroluminescence intensity and light output power than those with bare-ITO and NAZNR. The LED with WAZNR exhibited much higher EQE than those of the LEDs with bare-ITO and NAZNR. This result implies that the use of WAZNR can be an efficient processing tool for fabrication high performance GaN-based LEDs.

Original language	English
Title of host publication	ECS Transactions
Editors	J. Hite, V. Chakrapani, J. Zavada, T. J. Anderson, S. Kilgore
Publisher	Electrochemical Society Inc.
Pages	3-10
Number of pages	8
Edition	7
ISBN (Electronic)	9781607688358
ISBN (Print)	9781607688358
DOIs	https://doi.org/10.1149/08507.0003ecst
Publication status	Published - 2018
Event	Symposium on Wide Bandgap Semiconductor Materials and Devices 19 - 233rd ECS Meeting - Seattle, United States Duration: 2018 May 13 → 2018 May 17

Publication series

Name	ECS Transactions
Number	7
Volume	85
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Other

Other	Symposium on Wide Bandgap Semiconductor Materials and Devices 19 - 233rd ECS Meeting
Country/Territory	United States
City	Seattle
Period	18/5/13 → 18/5/17

Bibliographical note

Funding Information:
This work was supported by LG innotek Co., Ltd.

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1149/08507.0003ecst

Cite this

Performance of InGaN/GaN-based light emitting diodes fabricated with zno nanorods. / Kim, Ki Seok; Song, Sungjoo; Seong, Tae Yeon.
ECS Transactions. ed. / J. Hite; V. Chakrapani; J. Zavada; T. J. Anderson; S. Kilgore. 7. ed. Electrochemical Society Inc., 2018. p. 3-10 (ECS Transactions; Vol. 85, No. 7).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kim, KS, Song, S & Seong, TY 2018, Performance of InGaN/GaN-based light emitting diodes fabricated with zno nanorods. in J Hite, V Chakrapani, J Zavada, TJ Anderson & S Kilgore (eds), ECS Transactions. 7 edn, ECS Transactions, no. 7, vol. 85, Electrochemical Society Inc., pp. 3-10, Symposium on Wide Bandgap Semiconductor Materials and Devices 19 - 233rd ECS Meeting, Seattle, United States, 18/5/13. https://doi.org/10.1149/08507.0003ecst

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title = "Performance of InGaN/GaN-based light emitting diodes fabricated with zno nanorods",

abstract = "ZnO nanorod arrays grown by a simple non-catalytic polymer-template wet-chemical growth method were incorporated into blue InGaN-based LEDs to enhance the light extraction efficiency (LEE). Two types of ZnO nanorods, such as well-aligned ZnO nanorods (WAZNR) and not-well-aligned ZnO nanorods (NAZNR) were employed and compared with ITO-only electrodes. LEDs fabricated with WAZNR showed higher electroluminescence intensity and light output power than those with bare-ITO and NAZNR. The LED with WAZNR exhibited much higher EQE than those of the LEDs with bare-ITO and NAZNR. This result implies that the use of WAZNR can be an efficient processing tool for fabrication high performance GaN-based LEDs.",

author = "Kim, {Ki Seok} and Sungjoo Song and Seong, {Tae Yeon}",

note = "Funding Information: This work was supported by LG innotek Co., Ltd.; Symposium on Wide Bandgap Semiconductor Materials and Devices 19 - 233rd ECS Meeting ; Conference date: 13-05-2018 Through 17-05-2018",

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doi = "10.1149/08507.0003ecst",

language = "English",

isbn = "9781607688358",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "7",

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PY - 2018

Y1 - 2018

N2 - ZnO nanorod arrays grown by a simple non-catalytic polymer-template wet-chemical growth method were incorporated into blue InGaN-based LEDs to enhance the light extraction efficiency (LEE). Two types of ZnO nanorods, such as well-aligned ZnO nanorods (WAZNR) and not-well-aligned ZnO nanorods (NAZNR) were employed and compared with ITO-only electrodes. LEDs fabricated with WAZNR showed higher electroluminescence intensity and light output power than those with bare-ITO and NAZNR. The LED with WAZNR exhibited much higher EQE than those of the LEDs with bare-ITO and NAZNR. This result implies that the use of WAZNR can be an efficient processing tool for fabrication high performance GaN-based LEDs.

AB - ZnO nanorod arrays grown by a simple non-catalytic polymer-template wet-chemical growth method were incorporated into blue InGaN-based LEDs to enhance the light extraction efficiency (LEE). Two types of ZnO nanorods, such as well-aligned ZnO nanorods (WAZNR) and not-well-aligned ZnO nanorods (NAZNR) were employed and compared with ITO-only electrodes. LEDs fabricated with WAZNR showed higher electroluminescence intensity and light output power than those with bare-ITO and NAZNR. The LED with WAZNR exhibited much higher EQE than those of the LEDs with bare-ITO and NAZNR. This result implies that the use of WAZNR can be an efficient processing tool for fabrication high performance GaN-based LEDs.

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Performance of InGaN/GaN-based light emitting diodes fabricated with zno nanorods

Abstract

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