ZnO nanorod arrays grown by a simple non-catalytic polymer-template wet-chemical growth method were incorporated into blue InGaN-based LEDs to enhance the light extraction efficiency (LEE). Two types of ZnO nanorods, such as well-aligned ZnO nanorods (WAZNR) and not-well-aligned ZnO nanorods (NAZNR) were employed and compared with ITO-only electrodes. LEDs fabricated with WAZNR showed higher electroluminescence intensity and light output power than those with bare-ITO and NAZNR. The LED with WAZNR exhibited much higher EQE than those of the LEDs with bare-ITO and NAZNR. This result implies that the use of WAZNR can be an efficient processing tool for fabrication high performance GaN-based LEDs.
|Title of host publication||ECS Transactions|
|Editors||J. Hite, V. Chakrapani, J. Zavada, T. J. Anderson, S. Kilgore|
|Publisher||Electrochemical Society Inc.|
|Number of pages||8|
|Publication status||Published - 2018|
|Event||Symposium on Wide Bandgap Semiconductor Materials and Devices 19 - 233rd ECS Meeting - Seattle, United States|
Duration: 2018 May 13 → 2018 May 17
|Other||Symposium on Wide Bandgap Semiconductor Materials and Devices 19 - 233rd ECS Meeting|
|Period||18/5/13 → 18/5/17|
Bibliographical noteFunding Information:
This work was supported by LG innotek Co., Ltd.
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