Performance of InGaN/GaN light emitting diodes with n-GaN layer embedded with SiO2 nano-particles

Hong Seo Yom; Jin Kyu Yang; Alexander Y. Polyakov; In Hwan Lee

doi:10.3390/app8091574

Performance of InGaN/GaN light emitting diodes with n-GaN layer embedded with SiO₂ nano-particles

Hong Seo Yom, Jin Kyu Yang, Alexander Y. Polyakov, In Hwan Lee

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We demonstrate high-performance InGaN/GaN blue light emitting diodes (LEDs) embedded with an air-void layer produced by a dry-etch of nano-pillars in an n-GaN layer grown on patterned sapphire substrate (PSS), filling the space between nano-pillars with SiO₂ nano-particles (NPs) and subsequent epitaxial overgrowth. The structure exhibits enhanced output power compared to similarly grown reference conventional LED without the air-void layer. This change in growth procedure contributes to the increase of internal quantum efficiency (IQE) and light extraction efficiency (LEE) resulting in a 13.5% increase of light output. LEE is 2 times more affected than IQE in the modified structure. Simulation demonstrates that the main effect causing the LEE changes is due to the emitted light being confined within the upper space above the air-void layer and thus enhancing the light scattering by the SiO₂ NPs and preferential light via front surface.

Original language	English
Article number	1574
Journal	Applied Sciences (Switzerland)
Volume	8
Issue number	9
DOIs	https://doi.org/10.3390/app8091574
Publication status	Published - 2018 Sept 6

Bibliographical note

Funding Information:
Acknowledgments: This work was supported by National Research Foundation of Korea (NRF) funded by Ministry of Science and ICT (2017R1A2B3006141 and 2017R1A2B4012181). The work at NUST MISiS was supported in part by the Ministry of Education and Science of the Russian Federation in the framework of Increase Competitiveness Program of NUST «MISiS» (K2-2014-055).

Publisher Copyright:
© 2018 by the authors.

Keywords

Finite-difference time-domain method
Internal quantum efficiency
Light extraction efficiency
Nano-particles
Nano-pillars

ASJC Scopus subject areas

General Materials Science
Instrumentation
General Engineering
Process Chemistry and Technology
Computer Science Applications
Fluid Flow and Transfer Processes

Access to Document

10.3390/app8091574

Cite this

@article{94539ca4266b4ba6907fb08d7d57489a,

title = "Performance of InGaN/GaN light emitting diodes with n-GaN layer embedded with SiO2 nano-particles",

abstract = "We demonstrate high-performance InGaN/GaN blue light emitting diodes (LEDs) embedded with an air-void layer produced by a dry-etch of nano-pillars in an n-GaN layer grown on patterned sapphire substrate (PSS), filling the space between nano-pillars with SiO2 nano-particles (NPs) and subsequent epitaxial overgrowth. The structure exhibits enhanced output power compared to similarly grown reference conventional LED without the air-void layer. This change in growth procedure contributes to the increase of internal quantum efficiency (IQE) and light extraction efficiency (LEE) resulting in a 13.5% increase of light output. LEE is 2 times more affected than IQE in the modified structure. Simulation demonstrates that the main effect causing the LEE changes is due to the emitted light being confined within the upper space above the air-void layer and thus enhancing the light scattering by the SiO2 NPs and preferential light via front surface.",

keywords = "Finite-difference time-domain method, Internal quantum efficiency, Light extraction efficiency, Nano-particles, Nano-pillars",

author = "Yom, {Hong Seo} and Yang, {Jin Kyu} and Polyakov, {Alexander Y.} and Lee, {In Hwan}",

note = "Funding Information: Acknowledgments: This work was supported by National Research Foundation of Korea (NRF) funded by Ministry of Science and ICT (2017R1A2B3006141 and 2017R1A2B4012181). The work at NUST MISiS was supported in part by the Ministry of Education and Science of the Russian Federation in the framework of Increase Competitiveness Program of NUST «MISiS» (K2-2014-055). Publisher Copyright: {\textcopyright} 2018 by the authors.",

year = "2018",

month = sep,

day = "6",

doi = "10.3390/app8091574",

language = "English",

volume = "8",

journal = "Applied Sciences (Switzerland)",

issn = "2076-3417",

publisher = "Multidisciplinary Digital Publishing Institute (MDPI)",

number = "9",

}

TY - JOUR

T1 - Performance of InGaN/GaN light emitting diodes with n-GaN layer embedded with SiO2 nano-particles

AU - Yom, Hong Seo

AU - Yang, Jin Kyu

AU - Polyakov, Alexander Y.

AU - Lee, In Hwan

N1 - Funding Information: Acknowledgments: This work was supported by National Research Foundation of Korea (NRF) funded by Ministry of Science and ICT (2017R1A2B3006141 and 2017R1A2B4012181). The work at NUST MISiS was supported in part by the Ministry of Education and Science of the Russian Federation in the framework of Increase Competitiveness Program of NUST «MISiS» (K2-2014-055). Publisher Copyright: © 2018 by the authors.

PY - 2018/9/6

Y1 - 2018/9/6

N2 - We demonstrate high-performance InGaN/GaN blue light emitting diodes (LEDs) embedded with an air-void layer produced by a dry-etch of nano-pillars in an n-GaN layer grown on patterned sapphire substrate (PSS), filling the space between nano-pillars with SiO2 nano-particles (NPs) and subsequent epitaxial overgrowth. The structure exhibits enhanced output power compared to similarly grown reference conventional LED without the air-void layer. This change in growth procedure contributes to the increase of internal quantum efficiency (IQE) and light extraction efficiency (LEE) resulting in a 13.5% increase of light output. LEE is 2 times more affected than IQE in the modified structure. Simulation demonstrates that the main effect causing the LEE changes is due to the emitted light being confined within the upper space above the air-void layer and thus enhancing the light scattering by the SiO2 NPs and preferential light via front surface.

AB - We demonstrate high-performance InGaN/GaN blue light emitting diodes (LEDs) embedded with an air-void layer produced by a dry-etch of nano-pillars in an n-GaN layer grown on patterned sapphire substrate (PSS), filling the space between nano-pillars with SiO2 nano-particles (NPs) and subsequent epitaxial overgrowth. The structure exhibits enhanced output power compared to similarly grown reference conventional LED without the air-void layer. This change in growth procedure contributes to the increase of internal quantum efficiency (IQE) and light extraction efficiency (LEE) resulting in a 13.5% increase of light output. LEE is 2 times more affected than IQE in the modified structure. Simulation demonstrates that the main effect causing the LEE changes is due to the emitted light being confined within the upper space above the air-void layer and thus enhancing the light scattering by the SiO2 NPs and preferential light via front surface.

KW - Finite-difference time-domain method

KW - Internal quantum efficiency

KW - Light extraction efficiency

KW - Nano-particles

KW - Nano-pillars

UR - http://www.scopus.com/inward/record.url?scp=85053054191&partnerID=8YFLogxK

U2 - 10.3390/app8091574

DO - 10.3390/app8091574

M3 - Article

AN - SCOPUS:85053054191

SN - 2076-3417

VL - 8

JO - Applied Sciences (Switzerland)

JF - Applied Sciences (Switzerland)

IS - 9

M1 - 1574

ER -