We demonstrate high-performance InGaN/GaN blue light emitting diodes (LEDs) embedded with an air-void layer produced by a dry-etch of nano-pillars in an n-GaN layer grown on patterned sapphire substrate (PSS), filling the space between nano-pillars with SiO2 nano-particles (NPs) and subsequent epitaxial overgrowth. The structure exhibits enhanced output power compared to similarly grown reference conventional LED without the air-void layer. This change in growth procedure contributes to the increase of internal quantum efficiency (IQE) and light extraction efficiency (LEE) resulting in a 13.5% increase of light output. LEE is 2 times more affected than IQE in the modified structure. Simulation demonstrates that the main effect causing the LEE changes is due to the emitted light being confined within the upper space above the air-void layer and thus enhancing the light scattering by the SiO2 NPs and preferential light via front surface.
Bibliographical noteFunding Information:
Acknowledgments: This work was supported by National Research Foundation of Korea (NRF) funded by Ministry of Science and ICT (2017R1A2B3006141 and 2017R1A2B4012181). The work at NUST MISiS was supported in part by the Ministry of Education and Science of the Russian Federation in the framework of Increase Competitiveness Program of NUST «MISiS» (K2-2014-055).
© 2018 by the authors.
- Finite-difference time-domain method
- Internal quantum efficiency
- Light extraction efficiency
ASJC Scopus subject areas
- Materials Science(all)
- Process Chemistry and Technology
- Computer Science Applications
- Fluid Flow and Transfer Processes