Abstract
The electrical and thermal properties of a WCN diffusion barrier have been studied for Cu multilevel interconnects. The WCN has been prepared using an atomic layer deposition system with WF6-CH4-NH3-H2 gases and has a very low resistivity of 100μΩcm and 96.9% step coverage on the high-aspect-ratio vias. The thermally stable WCN maintains an amorphous state at 800 °C and Cu/WCN contact resistance remains within a 10% deviation from the initial value after 700 °C. The mean time to failure suggests that the Cu/WCN interconnects have a longer lifetime than Cu/TaN and Cu/WN interconnects because WCN prevents Cu migration owing to the stress evolution from tensile to compressive.
Original language | English |
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Article number | 04FC01 |
Journal | Japanese journal of applied physics |
Volume | 57 |
Issue number | 4 |
DOIs | |
Publication status | Published - 2018 Apr |
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)