Abstract
The electrical and thermal properties of a WCN diffusion barrier have been studied for Cu multilevel interconnects. The WCN has been prepared using an atomic layer deposition system with WF6-CH4-NH3-H2 gases and has a very low resistivity of 100μΩcm and 96.9% step coverage on the high-aspect-ratio vias. The thermally stable WCN maintains an amorphous state at 800 °C and Cu/WCN contact resistance remains within a 10% deviation from the initial value after 700 °C. The mean time to failure suggests that the Cu/WCN interconnects have a longer lifetime than Cu/TaN and Cu/WN interconnects because WCN prevents Cu migration owing to the stress evolution from tensile to compressive.
| Original language | English |
|---|---|
| Article number | 04FC01 |
| Journal | Japanese journal of applied physics |
| Volume | 57 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2018 Apr |
Bibliographical note
Funding Information:This work has been supported by National Research Foundation (NRF)-2015K1A3A7A03074026, Extremely Low Power Consumption Technology of eDRAM for Internet of Things. The authors would like to express special thanks to IPS Company for providing the ALD system. Technology, 2007, p. 1.
Funding Information:
This work has been supported by National Research Foundation (NRF)-2015K1A3A7A03074026, Extremely Low Power Consumption Technology of eDRAM for Internet of Things. The authors would like to express special thanks to IPS Company for providing the ALD system.
Publisher Copyright:
© 2018 The Japan Society of Applied Physics.
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)