Perpendicular magnetic anisotropy and interfacial dzyaloshinskii-moriya interaction in Pt/CoFeSiB structures

In Ho Cha; Nam Hui Kim; Yong Jin Kim; Gyu Won Kim; Chun Yeol You; Young Keun Kim

doi:10.1109/LMAG.2016.2617304

Perpendicular magnetic anisotropy and interfacial dzyaloshinskii-moriya interaction in Pt/CoFeSiB structures

In Ho Cha, Nam Hui Kim, Yong Jin Kim, Gyu Won Kim, Chun Yeol You, Young Keun Kim

Research output: Contribution to journal › Article › peer-review

Abstract

Magnetic materials exhibiting perpendicular magnetic anisotropy (PMA) have an important role in the development of high-density magnetic random-access memory and domain-wall devices. Exotic physical phenomena result from spin-orbit coupling, such as PMA and the interfacial Dzyaloshinskii-Moriya interaction (iDMI), at interfaces between nonmagnetic (NM) and ferromagnetic (FM) materials. We report on the NM Pt thickness dependence of PMA and iDMI in Ta/Pt/CoFeSiB/Ta films and the MgO thickness dependence of PMA in Ta/Pt/CoFeSiB/MgO/Ta films. We selected amorphous FM CoFeSiB because of its lower saturation magnetization (560 eμcm³) than that of Co or CoFeB, which may be beneficial for lowering the current density for switching. All samples were deposited by dc magnetron sputtering and annealed at 300 °C for 1 h. The Ta(3)/Pt(5)/CoFeSiB(1.5)/Ta(5) (nm) film exhibited PMA in the as-deposited state as well as after heat treatment. This structure possessed an iDMI energy density of 0.386 mJ/m².

Original language	English
Article number	7590057
Journal	IEEE Magnetics Letters
Volume	8
DOIs	https://doi.org/10.1109/LMAG.2016.2617304
Publication status	Published - 2017

Bibliographical note

Funding Information:
This research was supported by the Creative Materials Discovery Program through the National Research Foundation of Korea funded by the Ministry of Science, ICT and Future Planning (2015M3D1A1070465).

Publisher Copyright:
© 2010-2012 IEEE.

Keywords

Dzyaloshinskii-Moriya interaction
Magnetic film
Magnetic random-access memory
Perpendicular magnetic anisotropy
Spin electronics

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

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10.1109/LMAG.2016.2617304

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title = "Perpendicular magnetic anisotropy and interfacial dzyaloshinskii-moriya interaction in Pt/CoFeSiB structures",

abstract = "Magnetic materials exhibiting perpendicular magnetic anisotropy (PMA) have an important role in the development of high-density magnetic random-access memory and domain-wall devices. Exotic physical phenomena result from spin-orbit coupling, such as PMA and the interfacial Dzyaloshinskii-Moriya interaction (iDMI), at interfaces between nonmagnetic (NM) and ferromagnetic (FM) materials. We report on the NM Pt thickness dependence of PMA and iDMI in Ta/Pt/CoFeSiB/Ta films and the MgO thickness dependence of PMA in Ta/Pt/CoFeSiB/MgO/Ta films. We selected amorphous FM CoFeSiB because of its lower saturation magnetization (560 eμcm3) than that of Co or CoFeB, which may be beneficial for lowering the current density for switching. All samples were deposited by dc magnetron sputtering and annealed at 300 °C for 1 h. The Ta(3)/Pt(5)/CoFeSiB(1.5)/Ta(5) (nm) film exhibited PMA in the as-deposited state as well as after heat treatment. This structure possessed an iDMI energy density of 0.386 mJ/m2.",

keywords = "Dzyaloshinskii-Moriya interaction, Magnetic film, Magnetic random-access memory, Perpendicular magnetic anisotropy, Spin electronics",

author = "Cha, {In Ho} and Kim, {Nam Hui} and Kim, {Yong Jin} and Kim, {Gyu Won} and You, {Chun Yeol} and Kim, {Young Keun}",

note = "Funding Information: This research was supported by the Creative Materials Discovery Program through the National Research Foundation of Korea funded by the Ministry of Science, ICT and Future Planning (2015M3D1A1070465). Publisher Copyright: {\textcopyright} 2010-2012 IEEE.",

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doi = "10.1109/LMAG.2016.2617304",

language = "English",

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AU - Cha, In Ho

AU - Kim, Nam Hui

AU - Kim, Yong Jin

AU - Kim, Gyu Won

AU - You, Chun Yeol

AU - Kim, Young Keun

N1 - Funding Information: This research was supported by the Creative Materials Discovery Program through the National Research Foundation of Korea funded by the Ministry of Science, ICT and Future Planning (2015M3D1A1070465). Publisher Copyright: © 2010-2012 IEEE.

PY - 2017

Y1 - 2017

N2 - Magnetic materials exhibiting perpendicular magnetic anisotropy (PMA) have an important role in the development of high-density magnetic random-access memory and domain-wall devices. Exotic physical phenomena result from spin-orbit coupling, such as PMA and the interfacial Dzyaloshinskii-Moriya interaction (iDMI), at interfaces between nonmagnetic (NM) and ferromagnetic (FM) materials. We report on the NM Pt thickness dependence of PMA and iDMI in Ta/Pt/CoFeSiB/Ta films and the MgO thickness dependence of PMA in Ta/Pt/CoFeSiB/MgO/Ta films. We selected amorphous FM CoFeSiB because of its lower saturation magnetization (560 eμcm3) than that of Co or CoFeB, which may be beneficial for lowering the current density for switching. All samples were deposited by dc magnetron sputtering and annealed at 300 °C for 1 h. The Ta(3)/Pt(5)/CoFeSiB(1.5)/Ta(5) (nm) film exhibited PMA in the as-deposited state as well as after heat treatment. This structure possessed an iDMI energy density of 0.386 mJ/m2.

AB - Magnetic materials exhibiting perpendicular magnetic anisotropy (PMA) have an important role in the development of high-density magnetic random-access memory and domain-wall devices. Exotic physical phenomena result from spin-orbit coupling, such as PMA and the interfacial Dzyaloshinskii-Moriya interaction (iDMI), at interfaces between nonmagnetic (NM) and ferromagnetic (FM) materials. We report on the NM Pt thickness dependence of PMA and iDMI in Ta/Pt/CoFeSiB/Ta films and the MgO thickness dependence of PMA in Ta/Pt/CoFeSiB/MgO/Ta films. We selected amorphous FM CoFeSiB because of its lower saturation magnetization (560 eμcm3) than that of Co or CoFeB, which may be beneficial for lowering the current density for switching. All samples were deposited by dc magnetron sputtering and annealed at 300 °C for 1 h. The Ta(3)/Pt(5)/CoFeSiB(1.5)/Ta(5) (nm) film exhibited PMA in the as-deposited state as well as after heat treatment. This structure possessed an iDMI energy density of 0.386 mJ/m2.

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Perpendicular magnetic anisotropy and interfacial dzyaloshinskii-moriya interaction in Pt/CoFeSiB structures

Abstract

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Keywords

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