Persistent and reliable electrical properties of ReS2 FETs using PMMA encapsulation

Eui Hyoun Ryu; Miri Seo; Yugyeong Je; Hyun Jeong Jeong; Gyu Tae Kim; Sang Wook Lee

doi:10.1016/j.cap.2023.01.003

Persistent and reliable electrical properties of ReS₂ FETs using PMMA encapsulation

Eui Hyoun Ryu, Miri Seo, Yugyeong Je, Hyun Jeong Jeong, Gyu Tae Kim, Sang Wook Lee

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We investigated electrical properties f ReS₂ field effect transistor (FET) by focusing on how the absorbent molecules on the surface of ReS₂ channel could affect to its FET performances. A few layer ReS₂ based FET devices were fabricated by nanofabrication processes including micro-contact transfer method and electron-beam lithography technique. The FET characteristics were measured under following conditions: 1) with pristine device, 2) at vacuum condition, 3) after baking FET with hot plate, and 4) after PMMA spin-coating on FET. The current value at output characteristics were increased and hysteresis at transfer curve reduced when FET was measured in vacuum state and after baking process. The improved FET performances such as higher current and mobility values after baking process could be maintained by encapsulating the ReS₂ channel using PMMA spin-coating process. The effects of absorbents such as water and oxygen molecules on the ReS₂ surface were suggested based on the experimental results. Our results showed that simple baking and spin-coating methods could improve the electrical characteristics and maintain a persistent performance of ReS₂ FET.

Original language	English
Pages (from-to)	11-16
Number of pages	6
Journal	Current Applied Physics
Volume	48
DOIs	https://doi.org/10.1016/j.cap.2023.01.003
Publication status	Published - 2023 Apr

Bibliographical note

Funding Information:
This research was supported by the Basic Research Program (NRF-2022R1A2B5B01001640, NRF-2021R1A6A1A10039823, NRF-2021R1A2C2013002) and Global Research and Development Center Program (NRF-2018K1A4A3A01064272) through theNational Research Foundation of Korea(NRF) and also supported by Human Frontier Science Program(RGP00026/2019).

Publisher Copyright:
© 2023

Keywords

Baking
Channel surface stability
Encapsulation
Field-effect transistor
PMMA
ReS

ASJC Scopus subject areas

General Materials Science
General Physics and Astronomy

Access to Document

10.1016/j.cap.2023.01.003

Cite this

@article{1f5ce335bbb34a91b408e15367890406,

title = "Persistent and reliable electrical properties of ReS2 FETs using PMMA encapsulation",

abstract = "We investigated electrical properties f ReS2 field effect transistor (FET) by focusing on how the absorbent molecules on the surface of ReS2 channel could affect to its FET performances. A few layer ReS2 based FET devices were fabricated by nanofabrication processes including micro-contact transfer method and electron-beam lithography technique. The FET characteristics were measured under following conditions: 1) with pristine device, 2) at vacuum condition, 3) after baking FET with hot plate, and 4) after PMMA spin-coating on FET. The current value at output characteristics were increased and hysteresis at transfer curve reduced when FET was measured in vacuum state and after baking process. The improved FET performances such as higher current and mobility values after baking process could be maintained by encapsulating the ReS2 channel using PMMA spin-coating process. The effects of absorbents such as water and oxygen molecules on the ReS2 surface were suggested based on the experimental results. Our results showed that simple baking and spin-coating methods could improve the electrical characteristics and maintain a persistent performance of ReS2 FET.",

keywords = "Baking, Channel surface stability, Encapsulation, Field-effect transistor, PMMA, ReS",

author = "Ryu, {Eui Hyoun} and Miri Seo and Yugyeong Je and Jeong, {Hyun Jeong} and Kim, {Gyu Tae} and Lee, {Sang Wook}",

note = "Funding Information: This research was supported by the Basic Research Program (NRF-2022R1A2B5B01001640, NRF-2021R1A6A1A10039823, NRF-2021R1A2C2013002) and Global Research and Development Center Program (NRF-2018K1A4A3A01064272) through theNational Research Foundation of Korea(NRF) and also supported by Human Frontier Science Program(RGP00026/2019). Publisher Copyright: {\textcopyright} 2023",

year = "2023",

month = apr,

doi = "10.1016/j.cap.2023.01.003",

language = "English",

volume = "48",

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journal = "Current Applied Physics",

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T1 - Persistent and reliable electrical properties of ReS2 FETs using PMMA encapsulation

AU - Ryu, Eui Hyoun

AU - Seo, Miri

AU - Je, Yugyeong

AU - Jeong, Hyun Jeong

AU - Kim, Gyu Tae

AU - Lee, Sang Wook

N1 - Funding Information: This research was supported by the Basic Research Program (NRF-2022R1A2B5B01001640, NRF-2021R1A6A1A10039823, NRF-2021R1A2C2013002) and Global Research and Development Center Program (NRF-2018K1A4A3A01064272) through theNational Research Foundation of Korea(NRF) and also supported by Human Frontier Science Program(RGP00026/2019). Publisher Copyright: © 2023

PY - 2023/4

Y1 - 2023/4

N2 - We investigated electrical properties f ReS2 field effect transistor (FET) by focusing on how the absorbent molecules on the surface of ReS2 channel could affect to its FET performances. A few layer ReS2 based FET devices were fabricated by nanofabrication processes including micro-contact transfer method and electron-beam lithography technique. The FET characteristics were measured under following conditions: 1) with pristine device, 2) at vacuum condition, 3) after baking FET with hot plate, and 4) after PMMA spin-coating on FET. The current value at output characteristics were increased and hysteresis at transfer curve reduced when FET was measured in vacuum state and after baking process. The improved FET performances such as higher current and mobility values after baking process could be maintained by encapsulating the ReS2 channel using PMMA spin-coating process. The effects of absorbents such as water and oxygen molecules on the ReS2 surface were suggested based on the experimental results. Our results showed that simple baking and spin-coating methods could improve the electrical characteristics and maintain a persistent performance of ReS2 FET.

AB - We investigated electrical properties f ReS2 field effect transistor (FET) by focusing on how the absorbent molecules on the surface of ReS2 channel could affect to its FET performances. A few layer ReS2 based FET devices were fabricated by nanofabrication processes including micro-contact transfer method and electron-beam lithography technique. The FET characteristics were measured under following conditions: 1) with pristine device, 2) at vacuum condition, 3) after baking FET with hot plate, and 4) after PMMA spin-coating on FET. The current value at output characteristics were increased and hysteresis at transfer curve reduced when FET was measured in vacuum state and after baking process. The improved FET performances such as higher current and mobility values after baking process could be maintained by encapsulating the ReS2 channel using PMMA spin-coating process. The effects of absorbents such as water and oxygen molecules on the ReS2 surface were suggested based on the experimental results. Our results showed that simple baking and spin-coating methods could improve the electrical characteristics and maintain a persistent performance of ReS2 FET.

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KW - Channel surface stability

KW - Encapsulation

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