Abstract
Control over individual point defects in solid-state systems is becoming increasingly important, not only for current semiconductor industries but also for next generation quantum information science and technologies. To realize the potential of these defects for scalable and high-performance quantum applications, precise placement of defects and defect clusters at the nanoscale is required, along with improved control over the nanoscale local environment to minimize decoherence. These requirements are met using scanned probe microscopy in silicon and III-V semiconductors, which suggests the extension to hosts for quantum point defects such as diamond, silicon carbide, and hexagonal boron nitride is feasible. Here we provide a perspective on the principal challenges toward this end, and new opportunities afforded by the integration of scanned probes with optical and magnetic resonance techniques.
Original language | English |
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Pages (from-to) | 2033-2040 |
Number of pages | 8 |
Journal | Nanophotonics |
Volume | 8 |
Issue number | 11 |
DOIs | |
Publication status | Published - 2019 Nov 1 |
Bibliographical note
Publisher Copyright:© 2019 Jay A. Gupta et al., published by De Gruyter, Berlin/Boston.
Keywords
- atom manipulation
- dopant control
- nitrogen-vacancy (NV) center
- quantum information science
- scanned probe microscopy
ASJC Scopus subject areas
- Biotechnology
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering