Perspectives on deterministic control of quantum point defects by scanned probes

Donghun Lee, Jay A. Gupta

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


Control over individual point defects in solid-state systems is becoming increasingly important, not only for current semiconductor industries but also for next generation quantum information science and technologies. To realize the potential of these defects for scalable and high-performance quantum applications, precise placement of defects and defect clusters at the nanoscale is required, along with improved control over the nanoscale local environment to minimize decoherence. These requirements are met using scanned probe microscopy in silicon and III-V semiconductors, which suggests the extension to hosts for quantum point defects such as diamond, silicon carbide, and hexagonal boron nitride is feasible. Here we provide a perspective on the principal challenges toward this end, and new opportunities afforded by the integration of scanned probes with optical and magnetic resonance techniques.

Original languageEnglish
Pages (from-to)2033-2040
Number of pages8
Issue number11
Publication statusPublished - 2019 Nov 1


  • atom manipulation
  • dopant control
  • nitrogen-vacancy (NV) center
  • quantum information science
  • scanned probe microscopy

ASJC Scopus subject areas

  • Biotechnology
  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering


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