Perylrene-based n-type field-effect transistors prepared by the neutral cluster beam deposition method

Ying Zhang, Hoon Seok Seo, Min Jun An, Jong Ho Choi

Research output: Contribution to journalArticlepeer-review

22 Citations (Scopus)


We present the first application of the neutral cluster beam deposition (NCBD) method to prepare n-type organic thin-film transistors with a top-contact structure based on N,N′-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (P13). Systematic analysis was carried out to examine the effects of surface passivation and thermal post-treatment on the morphology and crystallinity of P13 active layers and device performance, together with operational stability as a function of time. The high room-temperature field-effect mobility of 0.58 cm2/Vs for the thermally post-treated devices was obtained under ambient conditions. The comparative study of the transport mechanisms responsible for conduction of the electron carriers over a temperature range of 10-300 K indicated that surface modification and thermal post-treatment decrease total trap density and activation energy for carrier transport by reducing structural disorder.

Original languageEnglish
Pages (from-to)895-900
Number of pages6
JournalOrganic Electronics
Issue number5
Publication statusPublished - 2009 Aug


  • Hexamethyldisilazane (HMDS)
  • N,N′-Ditridecylperylene-3,4,9,10-tetracarboxylic diimide (P13)
  • Neutral cluster beam deposition (NCBD)
  • Temperature-dependence of field-effect mobility
  • n-Type field-effect transistors

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering


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