Phase change and electrical characteristics of Ge-Se-Te alloys

Eui Bok Lee; Byeong Kwon Ju; Yong Tae Kim

doi:10.1016/j.mee.2009.03.089

Phase change and electrical characteristics of Ge-Se-Te alloys

Eui Bok Lee, Byeong Kwon Ju, Yong Tae Kim

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

Effects of Se contents in Ge-Se-Te ternary systems are investigated using edge contact type phase change random access memory cell structures. Increasing the Se content from 6 to 35 at% crystallization temperature and Ovonic switching threshold voltage are increased due to the large grain growth of hexagonal microstructure in the Ge-Se-Te alloys.

Original language	English
Pages (from-to)	1950-1953
Number of pages	4
Journal	Microelectronic Engineering
Volume	86
Issue number	7-9
DOIs	https://doi.org/10.1016/j.mee.2009.03.089
Publication status	Published - 2009 Jul

Bibliographical note

Funding Information:
This research was supported by the National Research Project for Phase-Change Random Access Memory Development sponsored by the Korean Ministry of Knowledge Economy and Samsung Electronics and supported by the National Research Laboratory (NRL, R0A-2007-000-20111-0) Program of the Ministry of Education, Science and Technology (Korea Science and Engineering Foundation, KOSEF).

Keywords

Chalcogenide
Ge-Se-Te alloys
Phase change materials

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/j.mee.2009.03.089

Cite this

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title = "Phase change and electrical characteristics of Ge-Se-Te alloys",

abstract = "Effects of Se contents in Ge-Se-Te ternary systems are investigated using edge contact type phase change random access memory cell structures. Increasing the Se content from 6 to 35 at% crystallization temperature and Ovonic switching threshold voltage are increased due to the large grain growth of hexagonal microstructure in the Ge-Se-Te alloys.",

keywords = "Chalcogenide, Ge-Se-Te alloys, Phase change materials",

author = "Lee, {Eui Bok} and Ju, {Byeong Kwon} and Kim, {Yong Tae}",

note = "Funding Information: This research was supported by the National Research Project for Phase-Change Random Access Memory Development sponsored by the Korean Ministry of Knowledge Economy and Samsung Electronics and supported by the National Research Laboratory (NRL, R0A-2007-000-20111-0) Program of the Ministry of Education, Science and Technology (Korea Science and Engineering Foundation, KOSEF).",

year = "2009",

month = jul,

doi = "10.1016/j.mee.2009.03.089",

language = "English",

volume = "86",

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journal = "Microelectronic Engineering",

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T1 - Phase change and electrical characteristics of Ge-Se-Te alloys

AU - Lee, Eui Bok

AU - Ju, Byeong Kwon

AU - Kim, Yong Tae

N1 - Funding Information: This research was supported by the National Research Project for Phase-Change Random Access Memory Development sponsored by the Korean Ministry of Knowledge Economy and Samsung Electronics and supported by the National Research Laboratory (NRL, R0A-2007-000-20111-0) Program of the Ministry of Education, Science and Technology (Korea Science and Engineering Foundation, KOSEF).

PY - 2009/7

Y1 - 2009/7

N2 - Effects of Se contents in Ge-Se-Te ternary systems are investigated using edge contact type phase change random access memory cell structures. Increasing the Se content from 6 to 35 at% crystallization temperature and Ovonic switching threshold voltage are increased due to the large grain growth of hexagonal microstructure in the Ge-Se-Te alloys.

AB - Effects of Se contents in Ge-Se-Te ternary systems are investigated using edge contact type phase change random access memory cell structures. Increasing the Se content from 6 to 35 at% crystallization temperature and Ovonic switching threshold voltage are increased due to the large grain growth of hexagonal microstructure in the Ge-Se-Te alloys.

KW - Chalcogenide

KW - Ge-Se-Te alloys

KW - Phase change materials

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U2 - 10.1016/j.mee.2009.03.089

DO - 10.1016/j.mee.2009.03.089

M3 - Article

AN - SCOPUS:67349118350

SN - 0167-9317

VL - 86

SP - 1950

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JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 7-9

ER -

Phase change and electrical characteristics of Ge-Se-Te alloys

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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