Phase change and electrical characteristics of Ge-Se-Te alloys

Eui Bok Lee, Byeong Kwon Ju, Yong Tae Kim

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)

Abstract

Effects of Se contents in Ge-Se-Te ternary systems are investigated using edge contact type phase change random access memory cell structures. Increasing the Se content from 6 to 35 at% crystallization temperature and Ovonic switching threshold voltage are increased due to the large grain growth of hexagonal microstructure in the Ge-Se-Te alloys.

Original languageEnglish
Pages (from-to)1950-1953
Number of pages4
JournalMicroelectronic Engineering
Volume86
Issue number7-9
DOIs
Publication statusPublished - 2009 Jul

Bibliographical note

Funding Information:
This research was supported by the National Research Project for Phase-Change Random Access Memory Development sponsored by the Korean Ministry of Knowledge Economy and Samsung Electronics and supported by the National Research Laboratory (NRL, R0A-2007-000-20111-0) Program of the Ministry of Education, Science and Technology (Korea Science and Engineering Foundation, KOSEF).

Keywords

  • Chalcogenide
  • Ge-Se-Te alloys
  • Phase change materials

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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