Phase separation and associated defects in MBE InAsySb1-y epitaxial layers

T. Y. Seong; A. G. Norman; J. L. Hutchison; I. T. Ferguson; G. R. Booker; R. A. Stradling; B. A. Joyce

Phase separation and associated defects in MBE InAs_ySb_1-y epitaxial layers

T. Y. Seong, A. G. Norman, J. L. Hutchison, I. T. Ferguson, G. R. Booker, R. A. Stradling, B. A. Joyce

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

TEM, TED and HREM examinations have been performed on (001) MBE layers of nominal composition InAs_0.5SB_0.5 grown using constant ratios of group V fluxes. For growth at 430°C, single composition material occurred. For growth at ≤400°C, alternating, tetragonally distorted, elongated platelets of two cubic phase of compositions approximately InAs_0.40Sb_0.60 and approximately InAs_0.78Sb_0.22 occurred, corresponding to a strained layer superlattice structure. These two-phase structures formed spontaneously at the growing layer surface and were stable during subsequent annealing at 370°C. It is suggested that they arise due to the presence of a miscibility gap at these low temperatures.

Original language	English
Title of host publication	Institute of Physics Conference Series
Publisher	Publ by Inst of Physics Publ Ltd
Pages	485-490
Number of pages	6
Edition	117
ISBN (Print)	0854984062
Publication status	Published - 1991
Externally published	Yes
Event	Proceedings of the Conference on Microscopy of Semiconducting Materials 1991 - Oxford, Engl Duration: 1991 Mar 25 → 1991 Mar 28

Publication series

Name	Institute of Physics Conference Series
Number	117
ISSN (Print)	0373-0751

Other

Other	Proceedings of the Conference on Microscopy of Semiconducting Materials 1991
City	Oxford, Engl
Period	91/3/25 → 91/3/28

ASJC Scopus subject areas

Physics and Astronomy(all)

Cite this

Phase separation and associated defects in MBE InAs_ySb_1-y epitaxial layers. / Seong, T. Y.; Norman, A. G.; Hutchison, J. L. et al.
Institute of Physics Conference Series. 117. ed. Publ by Inst of Physics Publ Ltd, 1991. p. 485-490 (Institute of Physics Conference Series; No. 117).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Seong, TY, Norman, AG, Hutchison, JL, Ferguson, IT, Booker, GR, Stradling, RA & Joyce, BA 1991, Phase separation and associated defects in MBE InAs_ySb_1-y epitaxial layers. in Institute of Physics Conference Series. 117 edn, Institute of Physics Conference Series, no. 117, Publ by Inst of Physics Publ Ltd, pp. 485-490, Proceedings of the Conference on Microscopy of Semiconducting Materials 1991, Oxford, Engl, 91/3/25.

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abstract = "TEM, TED and HREM examinations have been performed on (001) MBE layers of nominal composition InAs0.5SB0.5 grown using constant ratios of group V fluxes. For growth at 430°C, single composition material occurred. For growth at ≤400°C, alternating, tetragonally distorted, elongated platelets of two cubic phase of compositions approximately InAs0.40Sb0.60 and approximately InAs0.78Sb0.22 occurred, corresponding to a strained layer superlattice structure. These two-phase structures formed spontaneously at the growing layer surface and were stable during subsequent annealing at 370°C. It is suggested that they arise due to the presence of a miscibility gap at these low temperatures.",

author = "Seong, {T. Y.} and Norman, {A. G.} and Hutchison, {J. L.} and Ferguson, {I. T.} and Booker, {G. R.} and Stradling, {R. A.} and Joyce, {B. A.}",

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pages = "485--490",

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AU - Seong, T. Y.

AU - Norman, A. G.

AU - Hutchison, J. L.

AU - Ferguson, I. T.

AU - Booker, G. R.

AU - Stradling, R. A.

AU - Joyce, B. A.

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N2 - TEM, TED and HREM examinations have been performed on (001) MBE layers of nominal composition InAs0.5SB0.5 grown using constant ratios of group V fluxes. For growth at 430°C, single composition material occurred. For growth at ≤400°C, alternating, tetragonally distorted, elongated platelets of two cubic phase of compositions approximately InAs0.40Sb0.60 and approximately InAs0.78Sb0.22 occurred, corresponding to a strained layer superlattice structure. These two-phase structures formed spontaneously at the growing layer surface and were stable during subsequent annealing at 370°C. It is suggested that they arise due to the presence of a miscibility gap at these low temperatures.

AB - TEM, TED and HREM examinations have been performed on (001) MBE layers of nominal composition InAs0.5SB0.5 grown using constant ratios of group V fluxes. For growth at 430°C, single composition material occurred. For growth at ≤400°C, alternating, tetragonally distorted, elongated platelets of two cubic phase of compositions approximately InAs0.40Sb0.60 and approximately InAs0.78Sb0.22 occurred, corresponding to a strained layer superlattice structure. These two-phase structures formed spontaneously at the growing layer surface and were stable during subsequent annealing at 370°C. It is suggested that they arise due to the presence of a miscibility gap at these low temperatures.

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