Phase separation and atomic ordering in InAsSb epitaxial layers grown by molecular beam epitaxy

InAs _0.5Sb _0.5 epitaxial layers were grown by molecular beam epitaxy at 370° C on the three types of GaAs substrates with different misorientations: exact (001), 3° off toward [110] and 3° off toward [11̄0]. Transmission electron microscope and transmission electron diffraction studies showed that phase separation occurred resulting in plates lying approximately parallel to the layer surface and that CuPt-type atomic ordering also occurred during growth. The morphology of the phase separated plates was found to depend on different substrate misorientations. TED results showed that CuPt type atomic ordering was also affected by the steps associated with misorientations.