Phase separation suppression in InxGa1−xN on a Si substrate using an indium modulation technique

Hyeonseok Woo; Hansol Jo; Jongmin Kim; Sangeun Cho; Yongcheol Jo; Cheong Hyun Roh; Jun Ho Lee; Yonggon Seo; Jungho Park; Hyungsang Kim; Cheol Koo Hahn; Hyunsik Im

doi:10.1016/j.cap.2017.05.003

Phase separation suppression in In_xGa_1−xN on a Si substrate using an indium modulation technique

Hyeonseok Woo, Hansol Jo, Jongmin Kim, Sangeun Cho, Yongcheol Jo, Cheong Hyun Roh, Jun Ho Lee, Yonggon Seo, Jungho Park, Hyungsang Kim, Cheol Koo Hahn, Hyunsik Im

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

A high quality, single phase InGaN film is fabricated on a GaN/Si (111) substrate by optimizing the pulse patterned In supply with a plasma-assisted MBE technique. Compositional phase separation in InGaN is considerably suppressed. The optical and structural properties of the single phase InGaN epitaxial film are consistently confirmed by atomic force microscopy, X-ray diffraction and photoluminescence measurements. We propose a growth mechanism for single phase InGaN in terms of optimal incorporation and surface migration of In atoms.

Original language	English
Pages (from-to)	1142-1147
Number of pages	6
Journal	Current Applied Physics
Volume	17
Issue number	8
DOIs	https://doi.org/10.1016/j.cap.2017.05.003
Publication status	Published - 2017 Aug

Keywords

InGaN
MBE
Metal modulation epitaxy
Phase separation

ASJC Scopus subject areas

Materials Science(all)
Physics and Astronomy(all)

Access to Document

10.1016/j.cap.2017.05.003

Cite this

@article{9c36140dab1f4c32bd9f724a34c33144,

title = "Phase separation suppression in InxGa1−xN on a Si substrate using an indium modulation technique",

abstract = "A high quality, single phase InGaN film is fabricated on a GaN/Si (111) substrate by optimizing the pulse patterned In supply with a plasma-assisted MBE technique. Compositional phase separation in InGaN is considerably suppressed. The optical and structural properties of the single phase InGaN epitaxial film are consistently confirmed by atomic force microscopy, X-ray diffraction and photoluminescence measurements. We propose a growth mechanism for single phase InGaN in terms of optimal incorporation and surface migration of In atoms.",

keywords = "InGaN, MBE, Metal modulation epitaxy, Phase separation",

author = "Hyeonseok Woo and Hansol Jo and Jongmin Kim and Sangeun Cho and Yongcheol Jo and Roh, {Cheong Hyun} and Lee, {Jun Ho} and Yonggon Seo and Jungho Park and Hyungsang Kim and Hahn, {Cheol Koo} and Hyunsik Im",

note = "Funding Information: This work was supported by the Ministry of Trade, Industry & Energy (MOTIE, Korea) under Industrial Technology Innovation Program (10053859). H. Im would like to thank the financial support from the National Research Foundation (NRF) of Korea (Grant nos. 2016R1A6A1A03012877, 2015M2A2A6A02045251, 2015R1A2A2A01004782, 2015R1D1A1A01058851 and 2015R1D1A1A01060743). Publisher Copyright: {\textcopyright} 2017 Elsevier B.V.",

year = "2017",

month = aug,

doi = "10.1016/j.cap.2017.05.003",

language = "English",

volume = "17",

pages = "1142--1147",

journal = "Current Applied Physics",

issn = "1567-1739",

publisher = "Elsevier",

number = "8",

}

TY - JOUR

T1 - Phase separation suppression in InxGa1−xN on a Si substrate using an indium modulation technique

AU - Woo, Hyeonseok

AU - Jo, Hansol

AU - Kim, Jongmin

AU - Cho, Sangeun

AU - Jo, Yongcheol

AU - Roh, Cheong Hyun

AU - Lee, Jun Ho

AU - Seo, Yonggon

AU - Park, Jungho

AU - Kim, Hyungsang

AU - Hahn, Cheol Koo

AU - Im, Hyunsik

N1 - Funding Information: This work was supported by the Ministry of Trade, Industry & Energy (MOTIE, Korea) under Industrial Technology Innovation Program (10053859). H. Im would like to thank the financial support from the National Research Foundation (NRF) of Korea (Grant nos. 2016R1A6A1A03012877, 2015M2A2A6A02045251, 2015R1A2A2A01004782, 2015R1D1A1A01058851 and 2015R1D1A1A01060743). Publisher Copyright: © 2017 Elsevier B.V.

PY - 2017/8

Y1 - 2017/8

N2 - A high quality, single phase InGaN film is fabricated on a GaN/Si (111) substrate by optimizing the pulse patterned In supply with a plasma-assisted MBE technique. Compositional phase separation in InGaN is considerably suppressed. The optical and structural properties of the single phase InGaN epitaxial film are consistently confirmed by atomic force microscopy, X-ray diffraction and photoluminescence measurements. We propose a growth mechanism for single phase InGaN in terms of optimal incorporation and surface migration of In atoms.

AB - A high quality, single phase InGaN film is fabricated on a GaN/Si (111) substrate by optimizing the pulse patterned In supply with a plasma-assisted MBE technique. Compositional phase separation in InGaN is considerably suppressed. The optical and structural properties of the single phase InGaN epitaxial film are consistently confirmed by atomic force microscopy, X-ray diffraction and photoluminescence measurements. We propose a growth mechanism for single phase InGaN in terms of optimal incorporation and surface migration of In atoms.

KW - InGaN

KW - MBE

KW - Metal modulation epitaxy

KW - Phase separation

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DO - 10.1016/j.cap.2017.05.003

M3 - Article

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SN - 1567-1739

VL - 17

SP - 1142

EP - 1147

JO - Current Applied Physics

JF - Current Applied Physics

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