Phase separation suppression in InxGa1−xN on a Si substrate using an indium modulation technique

Hyeonseok Woo, Hansol Jo, Jongmin Kim, Sangeun Cho, Yongcheol Jo, Cheong Hyun Roh, Jun Ho Lee, Yonggon Seo, Jungho Park, Hyungsang Kim, Cheol Koo Hahn, Hyunsik Im

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


A high quality, single phase InGaN film is fabricated on a GaN/Si (111) substrate by optimizing the pulse patterned In supply with a plasma-assisted MBE technique. Compositional phase separation in InGaN is considerably suppressed. The optical and structural properties of the single phase InGaN epitaxial film are consistently confirmed by atomic force microscopy, X-ray diffraction and photoluminescence measurements. We propose a growth mechanism for single phase InGaN in terms of optimal incorporation and surface migration of In atoms.

Original languageEnglish
Pages (from-to)1142-1147
Number of pages6
JournalCurrent Applied Physics
Issue number8
Publication statusPublished - 2017 Aug

Bibliographical note

Funding Information:
This work was supported by the Ministry of Trade, Industry & Energy (MOTIE, Korea) under Industrial Technology Innovation Program (10053859). H. Im would like to thank the financial support from the National Research Foundation (NRF) of Korea (Grant nos. 2016R1A6A1A03012877, 2015M2A2A6A02045251, 2015R1A2A2A01004782, 2015R1D1A1A01058851 and 2015R1D1A1A01060743).

Publisher Copyright:
© 2017 Elsevier B.V.


  • InGaN
  • MBE
  • Metal modulation epitaxy
  • Phase separation

ASJC Scopus subject areas

  • General Materials Science
  • General Physics and Astronomy


Dive into the research topics of 'Phase separation suppression in InxGa1−xN on a Si substrate using an indium modulation technique'. Together they form a unique fingerprint.

Cite this