Abstract
CuIn xGa 1-x-Se 2 ink and paste by milling and subsequent heat treatment to remove organic compounds contained in the thick film are to be crucial to produce dense CuIn xGa 1-x- Se 2 absorber layer, however, few studies has been performed to address such processes. The object of this study is to identify wet milling conditions for CuIn xGa 1-x-Se 2 powder and observe its phase transition and pertinent morphology change according to different heat treatments of CuIn xGa 1-x-Se 2. CuIn xGa 1-x-Se 2 powder was dispersed in planetary mill containing diethylamine as solvent and exhibited no phase transformation. CuIn xGa 1-x-Se 2 disappeared after annealed in air at 200 °C or more. In the case of Se-N 2-H 2 atmosphere, secondary phase in small portion was formed after annealed at 150 °C up to 300 °C whereas CuIn xGa 1-x-Se 2 was maintained above it. Dense CuIn xGa 1-x-Se 2 film was obtained after sintered in Se-H 2-N 2 at 800 °C.
| Original language | English |
|---|---|
| Pages (from-to) | 4213-4216 |
| Number of pages | 4 |
| Journal | Asian Journal of Chemistry |
| Volume | 24 |
| Issue number | 9 |
| Publication status | Published - 2012 |
Keywords
- CuIn Ga -Se
- Milling process
- Phase transformation
- Solvothermal synthesis
- Thick film
ASJC Scopus subject areas
- Chemistry(all)