Phase transformation of CuInxGa1-x-Se2 powder by milling and heat treatment

Sin Il Gu; Hyo Soon Shin; Dong Hun Yeo; Sahn Nahm

Phase transformation of CuIn_xGa_1-x-Se₂ powder by milling and heat treatment

Sin Il Gu
, Hyo Soon Shin^*
, Dong Hun Yeo
, Sahn Nahm

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

CuIn_xGa_1-x-Se₂ ink and paste by milling and subsequent heat treatment to remove organic compounds contained in the thick film are to be crucial to produce dense CuIn_xGa_1-x- Se₂ absorber layer, however, few studies has been performed to address such processes. The object of this study is to identify wet milling conditions for CuIn_xGa_1-x-Se₂ powder and observe its phase transition and pertinent morphology change according to different heat treatments of CuIn_xGa_1-x-Se₂. CuIn_xGa_1-x-Se₂ powder was dispersed in planetary mill containing diethylamine as solvent and exhibited no phase transformation. CuIn_xGa_1-x-Se₂ disappeared after annealed in air at 200 °C or more. In the case of Se-N ₂-H₂ atmosphere, secondary phase in small portion was formed after annealed at 150 °C up to 300 °C whereas CuIn _xGa_1-x-Se₂ was maintained above it. Dense CuIn_xGa_1-x-Se₂ film was obtained after sintered in Se-H₂-N₂ at 800 °C.

Original language	English
Pages (from-to)	4213-4216
Number of pages	4
Journal	Asian Journal of Chemistry
Volume	24
Issue number	9
Publication status	Published - 2012

Keywords

Milling process
Phase transformation
Solvothermal synthesis
Thick film

ASJC Scopus subject areas

General Chemistry

Cite this

@article{88528396cf7e4bcab2bc4306ca420478,

title = "Phase transformation of CuInxGa1-x-Se2 powder by milling and heat treatment",

abstract = "CuInxGa1-x-Se2 ink and paste by milling and subsequent heat treatment to remove organic compounds contained in the thick film are to be crucial to produce dense CuInxGa1-x- Se2 absorber layer, however, few studies has been performed to address such processes. The object of this study is to identify wet milling conditions for CuInxGa1-x-Se2 powder and observe its phase transition and pertinent morphology change according to different heat treatments of CuInxGa1-x-Se2. CuInxGa1-x-Se2 powder was dispersed in planetary mill containing diethylamine as solvent and exhibited no phase transformation. CuInxGa1-x-Se2 disappeared after annealed in air at 200 °C or more. In the case of Se-N 2-H2 atmosphere, secondary phase in small portion was formed after annealed at 150 °C up to 300 °C whereas CuIn xGa1-x-Se2 was maintained above it. Dense CuInxGa1-x-Se2 film was obtained after sintered in Se-H2-N2 at 800 °C.",

keywords = "Milling process, Phase transformation, Solvothermal synthesis, Thick film",

author = "Gu, \{Sin Il\} and Shin, \{Hyo Soon\} and Yeo, \{Dong Hun\} and Sahn Nahm",

year = "2012",

language = "English",

volume = "24",

pages = "4213--4216",

journal = "Asian Journal of Chemistry",

issn = "0970-7077",

publisher = "Asian Publication Corporation",

number = "9",

}

TY - JOUR

T1 - Phase transformation of CuInxGa1-x-Se2 powder by milling and heat treatment

AU - Gu, Sin Il

AU - Shin, Hyo Soon

AU - Yeo, Dong Hun

AU - Nahm, Sahn

PY - 2012

Y1 - 2012

N2 - CuInxGa1-x-Se2 ink and paste by milling and subsequent heat treatment to remove organic compounds contained in the thick film are to be crucial to produce dense CuInxGa1-x- Se2 absorber layer, however, few studies has been performed to address such processes. The object of this study is to identify wet milling conditions for CuInxGa1-x-Se2 powder and observe its phase transition and pertinent morphology change according to different heat treatments of CuInxGa1-x-Se2. CuInxGa1-x-Se2 powder was dispersed in planetary mill containing diethylamine as solvent and exhibited no phase transformation. CuInxGa1-x-Se2 disappeared after annealed in air at 200 °C or more. In the case of Se-N 2-H2 atmosphere, secondary phase in small portion was formed after annealed at 150 °C up to 300 °C whereas CuIn xGa1-x-Se2 was maintained above it. Dense CuInxGa1-x-Se2 film was obtained after sintered in Se-H2-N2 at 800 °C.

AB - CuInxGa1-x-Se2 ink and paste by milling and subsequent heat treatment to remove organic compounds contained in the thick film are to be crucial to produce dense CuInxGa1-x- Se2 absorber layer, however, few studies has been performed to address such processes. The object of this study is to identify wet milling conditions for CuInxGa1-x-Se2 powder and observe its phase transition and pertinent morphology change according to different heat treatments of CuInxGa1-x-Se2. CuInxGa1-x-Se2 powder was dispersed in planetary mill containing diethylamine as solvent and exhibited no phase transformation. CuInxGa1-x-Se2 disappeared after annealed in air at 200 °C or more. In the case of Se-N 2-H2 atmosphere, secondary phase in small portion was formed after annealed at 150 °C up to 300 °C whereas CuIn xGa1-x-Se2 was maintained above it. Dense CuInxGa1-x-Se2 film was obtained after sintered in Se-H2-N2 at 800 °C.

KW - Milling process

KW - Phase transformation

KW - Solvothermal synthesis

KW - Thick film

UR - https://www.scopus.com/pages/publications/84861691064

M3 - Article

AN - SCOPUS:84861691064

SN - 0970-7077

VL - 24

SP - 4213

EP - 4216

JO - Asian Journal of Chemistry

JF - Asian Journal of Chemistry

IS - 9

ER -

Phase transformation of CuIn_xGa_1-x-Se₂ powder by milling and heat treatment

Abstract

Keywords

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this