TY - JOUR
T1 - Photo-induced negative differential resistance of organic thin film transistors using anthracene derivatives
AU - Jung, Jin Sun
AU - Cho, Eun Hei
AU - Jo, Soyoung
AU - Kim, Kyung Hwan
AU - Choi, Dong Hoon
AU - Joo, Jinsoo
N1 - Funding Information:
This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF), funded by the Ministry of Education, Science and Technology (No. 2012R1A2A2A01045102 ).
PY - 2013
Y1 - 2013
N2 - We fabricated organic thin film transistors (OTFTs) using soluble 5,50-(2,6-Bis((4-hexylphenyl) ethynyl)anthracene-9,10-diyl)bis(ethyne-2,1-diyl) bis(2-hexylthieno[3,2-b]thiophene (HTT-ant-THB) as an active layer. We studied the photo-responsive and the gate fielddependent charge transport characteristics of the HTT-ant-THB-based OTFTs. When light (λ ex = 505 nm) was irradiated on the OTFTs, negative differential resistance (NDR) behavior (i.e., negative slope of the current versus voltage curve) was observed in the reverse bias region of the source-drain current versus voltage characteristics. The NDR effect observed in this study is unique and is controlled by the wavelength and power of the incident light. The current hysteresis and NDR characteristics can be explained in terms of the trapping and releasing mechanism of the mobile charges at the interface between the electrodes and the organic layer. In addition, the NDR effect in the device disappeared on applying negative gate bias.
AB - We fabricated organic thin film transistors (OTFTs) using soluble 5,50-(2,6-Bis((4-hexylphenyl) ethynyl)anthracene-9,10-diyl)bis(ethyne-2,1-diyl) bis(2-hexylthieno[3,2-b]thiophene (HTT-ant-THB) as an active layer. We studied the photo-responsive and the gate fielddependent charge transport characteristics of the HTT-ant-THB-based OTFTs. When light (λ ex = 505 nm) was irradiated on the OTFTs, negative differential resistance (NDR) behavior (i.e., negative slope of the current versus voltage curve) was observed in the reverse bias region of the source-drain current versus voltage characteristics. The NDR effect observed in this study is unique and is controlled by the wavelength and power of the incident light. The current hysteresis and NDR characteristics can be explained in terms of the trapping and releasing mechanism of the mobile charges at the interface between the electrodes and the organic layer. In addition, the NDR effect in the device disappeared on applying negative gate bias.
KW - Charge trap
KW - Negative differential resistance
KW - Organic small molecule
KW - Organic thin film transistor
KW - Photo-responsive
UR - http://www.scopus.com/inward/record.url?scp=84885451172&partnerID=8YFLogxK
U2 - 10.1016/j.orgel.2013.05.019
DO - 10.1016/j.orgel.2013.05.019
M3 - Article
AN - SCOPUS:84885451172
SN - 1566-1199
VL - 14
SP - 2204
EP - 2209
JO - Organic Electronics: physics, materials, applications
JF - Organic Electronics: physics, materials, applications
IS - 9
ER -