The single-layer and multi-layers of MoS2 were grown using the chemical vapor deposition (CVD) method. The structural properties of the MoS2 were investigated through X-ray photoelectron spectroscopy (XPS). The optical characteristics in nanoscale of the MoS2 were determined from the analysis of Raman and photoluminescence (PL) spectra using a high-resolution laser confocal microscope (LCM). Thin-film-transistors (TFTs) using a single-layer MoS2 were fabricated, and the photo-responsive current-voltage (I–V) characteristics of the TFTs were measured with varying intensities of incident light. We observed the increase of both the photo-current and mobility with increasing the intensity of incident light. This is due to the contribution of photo-induced charge carriers from the valance band and trap states. The increasing rate of the photo-current of the TFTs with gate bias (i.e. on state) was considerably higher than that in off state, indicating the gate controlled photo-sensitive transistor.
Bibliographical noteFunding Information:
This research was supported by the National Research Foundation of Korea grant funded by the Korea government (MSIP) (No. 2015R1A2A2A01003805 ).
© 2016 Elsevier B.V.
ASJC Scopus subject areas
- General Materials Science
- General Physics and Astronomy