We report on the optoelectronic properties of the aligned SnO2 nanowire (NW) field effect transistors (FETs) fabricated via a sliding transfer of NWs grown by chemical vapor deposition. Photocurrent measurements with polarized UV light confirmed a well aligned NWs along the channels. UV photosensitivity of ∼ 107 at the gate voltage Vg =-40 V was obtained due to a small dark-current at the turn-off state of FET. The dynamic response of the photocurrent became faster for the higher mobility SnO2 NW FETs. We expect our aligned SnO2 NW FETs will be useful as polarized UV detectors with a high sensitivity.
Bibliographical noteFunding Information:
We thank Prof. Jong-Heun Lee and In-Sung Hwang for the setting of CVD apparatus. This work was supported by the Korean Science and Engineering Foundation (KOSEF) grants funded by the Korea government (MEST) (Grant Nos. ROA-2007-000-20102-0, M10503000187-05M0300-18710, WCU, R32-2008-000-10082-0, and R01-2008-008-20185-0).
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)