Photoconductance of aligned SnO2 nanowire field effect transistors

Daeil Kim; Yong Kwan Kim; Sung Chan Park; Jeong Sook Ha; Junghwan Huh; Junhong Na; Gyu Tae Kim

doi:10.1063/1.3190196

Photoconductance of aligned SnO₂ nanowire field effect transistors

Daeil Kim, Yong Kwan Kim, Sung Chan Park, Jeong Sook Ha, Junghwan Huh, Junhong Na, Gyu Tae Kim

Research output: Contribution to journal › Article › peer-review

46 Citations (Scopus)

Abstract

We report on the optoelectronic properties of the aligned SnO₂ nanowire (NW) field effect transistors (FETs) fabricated via a sliding transfer of NWs grown by chemical vapor deposition. Photocurrent measurements with polarized UV light confirmed a well aligned NWs along the channels. UV photosensitivity of ∼ 10⁷ at the gate voltage V_g =-40 V was obtained due to a small dark-current at the turn-off state of FET. The dynamic response of the photocurrent became faster for the higher mobility SnO₂ NW FETs. We expect our aligned SnO₂ NW FETs will be useful as polarized UV detectors with a high sensitivity.

Original language	English
Article number	043107
Journal	Applied Physics Letters
Volume	95
Issue number	4
DOIs	https://doi.org/10.1063/1.3190196
Publication status	Published - 2009

Bibliographical note

Funding Information:
We thank Prof. Jong-Heun Lee and In-Sung Hwang for the setting of CVD apparatus. This work was supported by the Korean Science and Engineering Foundation (KOSEF) grants funded by the Korea government (MEST) (Grant Nos. ROA-2007-000-20102-0, M10503000187-05M0300-18710, WCU, R32-2008-000-10082-0, and R01-2008-008-20185-0).

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3190196

Cite this

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title = "Photoconductance of aligned SnO2 nanowire field effect transistors",

abstract = "We report on the optoelectronic properties of the aligned SnO2 nanowire (NW) field effect transistors (FETs) fabricated via a sliding transfer of NWs grown by chemical vapor deposition. Photocurrent measurements with polarized UV light confirmed a well aligned NWs along the channels. UV photosensitivity of ∼ 107 at the gate voltage Vg =-40 V was obtained due to a small dark-current at the turn-off state of FET. The dynamic response of the photocurrent became faster for the higher mobility SnO2 NW FETs. We expect our aligned SnO2 NW FETs will be useful as polarized UV detectors with a high sensitivity.",

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note = "Funding Information: We thank Prof. Jong-Heun Lee and In-Sung Hwang for the setting of CVD apparatus. This work was supported by the Korean Science and Engineering Foundation (KOSEF) grants funded by the Korea government (MEST) (Grant Nos. ROA-2007-000-20102-0, M10503000187-05M0300-18710, WCU, R32-2008-000-10082-0, and R01-2008-008-20185-0).",

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AU - Kim, Daeil

AU - Kim, Yong Kwan

AU - Park, Sung Chan

AU - Ha, Jeong Sook

AU - Huh, Junghwan

AU - Na, Junhong

AU - Kim, Gyu Tae

N1 - Funding Information: We thank Prof. Jong-Heun Lee and In-Sung Hwang for the setting of CVD apparatus. This work was supported by the Korean Science and Engineering Foundation (KOSEF) grants funded by the Korea government (MEST) (Grant Nos. ROA-2007-000-20102-0, M10503000187-05M0300-18710, WCU, R32-2008-000-10082-0, and R01-2008-008-20185-0).

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N2 - We report on the optoelectronic properties of the aligned SnO2 nanowire (NW) field effect transistors (FETs) fabricated via a sliding transfer of NWs grown by chemical vapor deposition. Photocurrent measurements with polarized UV light confirmed a well aligned NWs along the channels. UV photosensitivity of ∼ 107 at the gate voltage Vg =-40 V was obtained due to a small dark-current at the turn-off state of FET. The dynamic response of the photocurrent became faster for the higher mobility SnO2 NW FETs. We expect our aligned SnO2 NW FETs will be useful as polarized UV detectors with a high sensitivity.

AB - We report on the optoelectronic properties of the aligned SnO2 nanowire (NW) field effect transistors (FETs) fabricated via a sliding transfer of NWs grown by chemical vapor deposition. Photocurrent measurements with polarized UV light confirmed a well aligned NWs along the channels. UV photosensitivity of ∼ 107 at the gate voltage Vg =-40 V was obtained due to a small dark-current at the turn-off state of FET. The dynamic response of the photocurrent became faster for the higher mobility SnO2 NW FETs. We expect our aligned SnO2 NW FETs will be useful as polarized UV detectors with a high sensitivity.

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