Photoconductive probing and computer simulation of microwave potentials inside a SiGe MMIC

G. David, K. Yang, M. Crites, J. S. Rieh, L. H. Lu, P. Bhattacharya, L. P.B. Katehi, J. F. Whitaker

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

Electrical potentials inside a SiGe MMIC are measured at frequencies up to 20 GHz using a micro-machined photoconductive sampling probe and compared with values predicted using microwave CAD software. The results illustrate that this combination of simulation and in-circuit measurement technique is a powerful tool for performing diagnostics of the microwave performance of Si-based RF circuits. The methodology can be used for applications such as fault isolation and validation of device models, as well as for investigation of the sensitivity of performance to process variations.

Original languageEnglish
Title of host publication1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998
EditorsSammy Kayali
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages187-191
Number of pages5
ISBN (Electronic)0780352882, 9780780352889
DOIs
Publication statusPublished - 1998
Externally publishedYes
Event1st Topical Meeting on Silicon Mono1ithic Integrated Circuits in RF Systems, SiRF 1998 - Ann Arbor, United States
Duration: 1998 Sept 181998 Sept 18

Publication series

Name1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998
Volume1998-September

Other

Other1st Topical Meeting on Silicon Mono1ithic Integrated Circuits in RF Systems, SiRF 1998
Country/TerritoryUnited States
CityAnn Arbor
Period98/9/1898/9/18

Bibliographical note

Publisher Copyright:
© 1998 IEEE.

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Instrumentation

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