Abstract
Electrical potentials inside a SiGe MMIC are measured at frequencies up to 20 GHz using a micro-machined photoconductive sampling probe and compared with values predicted using microwave CAD software. The results illustrate that this combination of simulation and in-circuit measurement technique is a powerful tool for performing diagnostics of the microwave performance of Si-based RF circuits. The methodology can be used for applications such as fault isolation and validation of device models, as well as for investigation of the sensitivity of performance to process variations.
Original language | English |
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Title of host publication | 1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998 |
Editors | Sammy Kayali |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 187-191 |
Number of pages | 5 |
ISBN (Electronic) | 0780352882, 9780780352889 |
DOIs | |
Publication status | Published - 1998 |
Externally published | Yes |
Event | 1st Topical Meeting on Silicon Mono1ithic Integrated Circuits in RF Systems, SiRF 1998 - Ann Arbor, United States Duration: 1998 Sept 18 → 1998 Sept 18 |
Publication series
Name | 1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998 |
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Volume | 1998-September |
Other
Other | 1st Topical Meeting on Silicon Mono1ithic Integrated Circuits in RF Systems, SiRF 1998 |
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Country/Territory | United States |
City | Ann Arbor |
Period | 98/9/18 → 98/9/18 |
Bibliographical note
Publisher Copyright:© 1998 IEEE.
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Instrumentation