Photocurrent characteristics of HgTe nanoparticle films-Si nanowires heterojunctions made using a simple transfer-dropping method

Sukhyung Park; Kyoungah Cho; Sangsig Kim

doi:10.1166/jnn.2013.7255

Photocurrent characteristics of HgTe nanoparticle films-Si nanowires heterojunctions made using a simple transfer-dropping method

Sukhyung Park, Kyoungah Cho, Sangsig Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

In this study, pn heterojunction diodes are constructed with p-type HgTe nanoparticle (NP) films dropped by a nanoplotter and n-type Si nanowires (NWs) transferred onto plastic substrates and their optoelectronic characteristics are investigated under the illumination of 633-nm wavelength light. The rectification ratio when light is irradiated on the diode is twice that in the dark. The photocurrent efficiency of the diode at a bias voltage of 2.5 V is determined to be 0.41 μA/W, which is greater than that of the transferred Si NWs.

Original language	English
Pages (from-to)	3539-3541
Number of pages	3
Journal	Journal of Nanoscience and Nanotechnology
Volume	13
Issue number	5
DOIs	https://doi.org/10.1166/jnn.2013.7255
Publication status	Published - 2013 May

Keywords

Nanoparticle
Photocurrent
Pn heterojunction
Silicon nanowire

ASJC Scopus subject areas

Bioengineering
Chemistry(all)
Biomedical Engineering
Materials Science(all)
Condensed Matter Physics

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10.1166/jnn.2013.7255

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abstract = "In this study, pn heterojunction diodes are constructed with p-type HgTe nanoparticle (NP) films dropped by a nanoplotter and n-type Si nanowires (NWs) transferred onto plastic substrates and their optoelectronic characteristics are investigated under the illumination of 633-nm wavelength light. The rectification ratio when light is irradiated on the diode is twice that in the dark. The photocurrent efficiency of the diode at a bias voltage of 2.5 V is determined to be 0.41 μA/W, which is greater than that of the transferred Si NWs.",

keywords = "Nanoparticle, Photocurrent, Pn heterojunction, Silicon nanowire",

author = "Sukhyung Park and Kyoungah Cho and Sangsig Kim",

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N2 - In this study, pn heterojunction diodes are constructed with p-type HgTe nanoparticle (NP) films dropped by a nanoplotter and n-type Si nanowires (NWs) transferred onto plastic substrates and their optoelectronic characteristics are investigated under the illumination of 633-nm wavelength light. The rectification ratio when light is irradiated on the diode is twice that in the dark. The photocurrent efficiency of the diode at a bias voltage of 2.5 V is determined to be 0.41 μA/W, which is greater than that of the transferred Si NWs.

AB - In this study, pn heterojunction diodes are constructed with p-type HgTe nanoparticle (NP) films dropped by a nanoplotter and n-type Si nanowires (NWs) transferred onto plastic substrates and their optoelectronic characteristics are investigated under the illumination of 633-nm wavelength light. The rectification ratio when light is irradiated on the diode is twice that in the dark. The photocurrent efficiency of the diode at a bias voltage of 2.5 V is determined to be 0.41 μA/W, which is greater than that of the transferred Si NWs.

KW - Nanoparticle

KW - Photocurrent

KW - Pn heterojunction

KW - Silicon nanowire

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Photocurrent characteristics of HgTe nanoparticle films-Si nanowires heterojunctions made using a simple transfer-dropping method

Abstract

Keywords

ASJC Scopus subject areas

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