@inproceedings{82691f0d507e423797cee4c2a1b9a821,
title = "Photocurrent spectroscopy of single wurtzite GaAs nanowires",
abstract = "Photocurrent of single wurtzite GaAs nanowires grown by Au-assisted molecular beam epitaxy is measured at room and low temperature (10 K). At room temperature a high photo-response with more than two orders of magnitude increase of current is observed. The wavelength dependence of the photocurrent shows a sharp change near the zinc blende GaAs band gap. The absence of the free exciton peak in the low temperature photocurrent spectrum, and problems related to determining the exact position of the energy bandgap of wurtzite GaAs from the observed data are discussed.",
keywords = "GaAs, Photocurrent, nanowire, wurtzite",
author = "Kim, {D. C.} and L. Ahtapodov and Boe, {A. B.} and Choi, {J. W.} and H. Ji and Kim, {G. T.} and Moses, {A. F.} and Dheeraj, {D. L.} and Fimland, {B. O.} and H. Weman",
year = "2011",
doi = "10.1063/1.3666437",
language = "English",
isbn = "9780735410022",
series = "AIP Conference Proceedings",
pages = "429--430",
booktitle = "Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30",
note = "30th International Conference on the Physics of Semiconductors, ICPS-30 ; Conference date: 25-07-2010 Through 30-07-2010",
}