Abstract
The photoelectromagnetic effects on electron and proton irradiated CuInSe2 (CIS) thin films were investigated by using radio frequency sputtering method. The damage constant was estimated from the change in diffusion length before and after irradiation. It was found that the diffusion length decreased due to irradiation-induced defects when the electron fluence exceeded 1×1016cm-2.
Original language | English |
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Pages (from-to) | 276-278 |
Number of pages | 3 |
Journal | Journal of Applied Physics |
Volume | 94 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2003 Jul 1 |
Externally published | Yes |
Bibliographical note
Copyright:Copyright 2008 Elsevier B.V., All rights reserved.
ASJC Scopus subject areas
- Physics and Astronomy(all)