Photogating effects of HgTe nanoparticles on a single ZnO nanowire

Seong Hojun; Cho Kyoungah; Yun Junggwon; Kwak Kiyeol; Jun Jin Hyung; Kim Sangsig

doi:10.1016/j.solidstatesciences.2010.04.034

Photogating effects of HgTe nanoparticles on a single ZnO nanowire

Seong Hojun, Cho Kyoungah, Yun Junggwon, Kwak Kiyeol, Jun Jin Hyung, Kim Sangsig

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

In this study, we demonstrate the photogating effects of p-type HgTe nanoparticles (NPs) on an n-type ZnO nanowire (NW). The photogating effects are due to the charge separation of the charge carriers photogenerated in the NPs under illumination and the subsequent accumulation of the photogenerated electrons in the pn junction of the NPs and the NW. The presence of the electrons in the junction reduces the current in the ZnO NW. The photogating effects are proved by the different photocurrent behavior of the ZnO NW to which the HgTe NPs are attached from that of a bare ZnO NW. In addition, the dependence of the photogating effects on the power of the incident light is discussed.

Original language	English
Pages (from-to)	1328-1331
Number of pages	4
Journal	Solid State Sciences
Volume	12
Issue number	8
DOIs	https://doi.org/10.1016/j.solidstatesciences.2010.04.034
Publication status	Published - 2010 Aug

Bibliographical note

Funding Information:
This work was supported by the Medium-term Strategic Technology Development Program, the “SystemIC2010” project of the Korea Ministry of Commerce, Industry and Energy, the Nano R&D Program ( M10703000980-08M0300-98010 ), and World Class University (WCU, R32-2008-000-10082-0 ) Project of the Ministry of Education, Science and Technology (Korea Science and Engineering Foundation).

Keywords

Compound semiconductors
Electro-optical effects
Nanocrystalline materials
Optical materials

ASJC Scopus subject areas

General Chemistry
General Materials Science
Condensed Matter Physics

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10.1016/j.solidstatesciences.2010.04.034

Cite this

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title = "Photogating effects of HgTe nanoparticles on a single ZnO nanowire",

abstract = "In this study, we demonstrate the photogating effects of p-type HgTe nanoparticles (NPs) on an n-type ZnO nanowire (NW). The photogating effects are due to the charge separation of the charge carriers photogenerated in the NPs under illumination and the subsequent accumulation of the photogenerated electrons in the pn junction of the NPs and the NW. The presence of the electrons in the junction reduces the current in the ZnO NW. The photogating effects are proved by the different photocurrent behavior of the ZnO NW to which the HgTe NPs are attached from that of a bare ZnO NW. In addition, the dependence of the photogating effects on the power of the incident light is discussed.",

keywords = "Compound semiconductors, Electro-optical effects, Nanocrystalline materials, Optical materials",

author = "Seong Hojun and Cho Kyoungah and Yun Junggwon and Kwak Kiyeol and Hyung, {Jun Jin} and Kim Sangsig",

note = "Funding Information: This work was supported by the Medium-term Strategic Technology Development Program, the “SystemIC2010” project of the Korea Ministry of Commerce, Industry and Energy, the Nano R&D Program ( M10703000980-08M0300-98010 ), and World Class University (WCU, R32-2008-000-10082-0 ) Project of the Ministry of Education, Science and Technology (Korea Science and Engineering Foundation).",

year = "2010",

month = aug,

doi = "10.1016/j.solidstatesciences.2010.04.034",

language = "English",

volume = "12",

pages = "1328--1331",

journal = "Solid State Sciences",

issn = "1293-2558",

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T1 - Photogating effects of HgTe nanoparticles on a single ZnO nanowire

AU - Hojun, Seong

AU - Kyoungah, Cho

AU - Junggwon, Yun

AU - Kiyeol, Kwak

AU - Hyung, Jun Jin

AU - Sangsig, Kim

N1 - Funding Information: This work was supported by the Medium-term Strategic Technology Development Program, the “SystemIC2010” project of the Korea Ministry of Commerce, Industry and Energy, the Nano R&D Program ( M10703000980-08M0300-98010 ), and World Class University (WCU, R32-2008-000-10082-0 ) Project of the Ministry of Education, Science and Technology (Korea Science and Engineering Foundation).

PY - 2010/8

Y1 - 2010/8

N2 - In this study, we demonstrate the photogating effects of p-type HgTe nanoparticles (NPs) on an n-type ZnO nanowire (NW). The photogating effects are due to the charge separation of the charge carriers photogenerated in the NPs under illumination and the subsequent accumulation of the photogenerated electrons in the pn junction of the NPs and the NW. The presence of the electrons in the junction reduces the current in the ZnO NW. The photogating effects are proved by the different photocurrent behavior of the ZnO NW to which the HgTe NPs are attached from that of a bare ZnO NW. In addition, the dependence of the photogating effects on the power of the incident light is discussed.

AB - In this study, we demonstrate the photogating effects of p-type HgTe nanoparticles (NPs) on an n-type ZnO nanowire (NW). The photogating effects are due to the charge separation of the charge carriers photogenerated in the NPs under illumination and the subsequent accumulation of the photogenerated electrons in the pn junction of the NPs and the NW. The presence of the electrons in the junction reduces the current in the ZnO NW. The photogating effects are proved by the different photocurrent behavior of the ZnO NW to which the HgTe NPs are attached from that of a bare ZnO NW. In addition, the dependence of the photogating effects on the power of the incident light is discussed.

KW - Compound semiconductors

KW - Electro-optical effects

KW - Nanocrystalline materials

KW - Optical materials

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U2 - 10.1016/j.solidstatesciences.2010.04.034

DO - 10.1016/j.solidstatesciences.2010.04.034

M3 - Article

AN - SCOPUS:77955416961

SN - 1293-2558

VL - 12

SP - 1328

EP - 1331

JO - Solid State Sciences

JF - Solid State Sciences

IS - 8

ER -

Photogating effects of HgTe nanoparticles on a single ZnO nanowire

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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