Abstract
We fabricated OTFT device using soluble π-conjugated dendrimer, 4(HPBT)-benzene, and investigated photoinduced characteristics of the device. The OTFT device using 4(HPBT)-benzene as an active layer showed a carrier mobility as high as 6×10-3 cm2/Vs in dark conditions and sensitive photoinduced characteristics even at low light intensity. We observed the shift of threshold voltage and saturation current in photoinduced field-effect transistor characteristic curves. Through the measurements of the photoinduced saturation current as a function of drain voltages, we estimated photoinduced charge density of the OTFT.
Original language | English |
---|---|
Pages | 1825-1827 |
Number of pages | 3 |
Publication status | Published - 2007 |
Event | 14th International Display Workshops, IDW '07 - Sapporo, Japan Duration: 2007 Dec 5 → 2007 Dec 5 |
Other
Other | 14th International Display Workshops, IDW '07 |
---|---|
Country/Territory | Japan |
City | Sapporo |
Period | 07/12/5 → 07/12/5 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Radiology Nuclear Medicine and imaging
- Atomic and Molecular Physics, and Optics