Photoluminescence and electrical properties of epitaxial Al-doped ZnO transparent conducting thin films

Jun Hong Noh; In Sun Cho; Sangwook Lee; Chin Moo Cho; Hyun Soo Han; Jae Sul An; Chae Hyun Kwak; Jin Yong Kim; Hyun Suk Jung; Jung Kun Lee; Kug Sun Hong

doi:10.1002/pssa.200881790

Photoluminescence and electrical properties of epitaxial Al-doped ZnO transparent conducting thin films

Jun Hong Noh, In Sun Cho, Sangwook Lee, Chin Moo Cho, Hyun Soo Han, Jae Sul An, Chae Hyun Kwak, Jin Yong Kim, Hyun Suk Jung, Jung Kun Lee, Kug Sun Hong

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

Epitaxial ZnO and Al-doped ZnO (AZO) thin films were grown on (0001)-sapphire substrates using pulsed laser deposition. The photoluminescence spectrum of the highly conductive (1.3×10 ³ S cm ^-1), as-grown AZO shows a poor near band edge (NBE) emission (3.30 eV) and no deep level emission at room temperature. In addition, the peak (3.386 eV) for the free excitons of AZO showed thermal quenching behavior with two activation energies (38.2 and 10.0 meV). The poor NBE emission is attributed to the nonradiative recombination center created by Al doping. Highly conductive (6.0×10 ² S cm ^-1) and intense NBE emitting AZO films could be achieved by the reduction of the nonradiative recombination centers through hydrogen annealing.

Original language	English
Pages (from-to)	2133-2138
Number of pages	6
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	206
Issue number	9
DOIs	https://doi.org/10.1002/pssa.200881790
Publication status	Published - 2009 Sept
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Surfaces and Interfaces

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@article{6d4adc5faf3a4c8b950e654989046ed1,

title = "Photoluminescence and electrical properties of epitaxial Al-doped ZnO transparent conducting thin films",

abstract = "Epitaxial ZnO and Al-doped ZnO (AZO) thin films were grown on (0001)-sapphire substrates using pulsed laser deposition. The photoluminescence spectrum of the highly conductive (1.3×10 3 S cm -1), as-grown AZO shows a poor near band edge (NBE) emission (3.30 eV) and no deep level emission at room temperature. In addition, the peak (3.386 eV) for the free excitons of AZO showed thermal quenching behavior with two activation energies (38.2 and 10.0 meV). The poor NBE emission is attributed to the nonradiative recombination center created by Al doping. Highly conductive (6.0×10 2 S cm -1) and intense NBE emitting AZO films could be achieved by the reduction of the nonradiative recombination centers through hydrogen annealing.",

author = "Noh, {Jun Hong} and Cho, {In Sun} and Sangwook Lee and Cho, {Chin Moo} and Han, {Hyun Soo} and An, {Jae Sul} and Kwak, {Chae Hyun} and Kim, {Jin Yong} and Jung, {Hyun Suk} and Lee, {Jung Kun} and Hong, {Kug Sun}",

year = "2009",

month = sep,

doi = "10.1002/pssa.200881790",

language = "English",

volume = "206",

pages = "2133--2138",

journal = "Physica Status Solidi (A) Applications and Materials Science",

issn = "1862-6300",

publisher = "Wiley-VCH Verlag",

number = "9",

}

TY - JOUR

T1 - Photoluminescence and electrical properties of epitaxial Al-doped ZnO transparent conducting thin films

AU - Noh, Jun Hong

AU - Cho, In Sun

AU - Lee, Sangwook

AU - Cho, Chin Moo

AU - Han, Hyun Soo

AU - An, Jae Sul

AU - Kwak, Chae Hyun

AU - Kim, Jin Yong

AU - Jung, Hyun Suk

AU - Lee, Jung Kun

AU - Hong, Kug Sun

PY - 2009/9

Y1 - 2009/9

N2 - Epitaxial ZnO and Al-doped ZnO (AZO) thin films were grown on (0001)-sapphire substrates using pulsed laser deposition. The photoluminescence spectrum of the highly conductive (1.3×10 3 S cm -1), as-grown AZO shows a poor near band edge (NBE) emission (3.30 eV) and no deep level emission at room temperature. In addition, the peak (3.386 eV) for the free excitons of AZO showed thermal quenching behavior with two activation energies (38.2 and 10.0 meV). The poor NBE emission is attributed to the nonradiative recombination center created by Al doping. Highly conductive (6.0×10 2 S cm -1) and intense NBE emitting AZO films could be achieved by the reduction of the nonradiative recombination centers through hydrogen annealing.

AB - Epitaxial ZnO and Al-doped ZnO (AZO) thin films were grown on (0001)-sapphire substrates using pulsed laser deposition. The photoluminescence spectrum of the highly conductive (1.3×10 3 S cm -1), as-grown AZO shows a poor near band edge (NBE) emission (3.30 eV) and no deep level emission at room temperature. In addition, the peak (3.386 eV) for the free excitons of AZO showed thermal quenching behavior with two activation energies (38.2 and 10.0 meV). The poor NBE emission is attributed to the nonradiative recombination center created by Al doping. Highly conductive (6.0×10 2 S cm -1) and intense NBE emitting AZO films could be achieved by the reduction of the nonradiative recombination centers through hydrogen annealing.

UR - http://www.scopus.com/inward/record.url?scp=70349162873&partnerID=8YFLogxK

U2 - 10.1002/pssa.200881790

DO - 10.1002/pssa.200881790

M3 - Article

AN - SCOPUS:70349162873

SN - 1862-6300

VL - 206

SP - 2133

EP - 2138

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

IS - 9

ER -

Photoluminescence and electrical properties of epitaxial Al-doped ZnO transparent conducting thin films

Abstract

ASJC Scopus subject areas

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