Photoluminescence enhancement by localized surface plasmons in AlGaN/GaN/AlGaN double heterostructures

Alexander Y. Polyakov, Jin Hyeon Yun, Haeng Keun Ahn, Alexander S. Usikov, Eugene B. Yakimov, Sergey A. Tarelkin, Nikolai B. Smirnov, Kirill D. Shcherbachev, Heikki Helava, Yuri N. Makarov, Sergey Yu Kurin, Sergey I. Didenko, Boris P. Papchenko, In Hwan Lee

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


Double heterostructures AlGaN/GaN/AlGaN grown by hydride vapor phase epitaxy and designed for use as light emitting diodes for 360 nm wavelength were patterned by shallow nanoholes and injected with Ag/SiO2 or Al nanoparticles. A 1.8 times increase in the photoluminescence and microcathodoluminescence signal from the GaN active region was observed for 100 nm diameter Al nanoparticles, the efficiency decreased compared to the reference planar samples for small Al nanoparticles of 30-40 nm diameter, and a moderate increase of 1.2 times was detected for Ag/SiO2 nanoparticles. The observed phenomena are explained by the GaN emitter coupling with localized surface plasmons produced by metallic nanoparticles.

Original languageEnglish
Pages (from-to)575-579
Number of pages5
JournalPhysica Status Solidi - Rapid Research Letters
Issue number10
Publication statusPublished - 2015 Oct
Externally publishedYes

Bibliographical note

Publisher Copyright:
� 2015 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim.


  • AlGaN
  • GaN
  • Heterostructures
  • Light emitting diodes
  • Photoluminescence
  • Surface plasmons

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics


Dive into the research topics of 'Photoluminescence enhancement by localized surface plasmons in AlGaN/GaN/AlGaN double heterostructures'. Together they form a unique fingerprint.

Cite this