Photoluminescence enhancement in GaNInGaN multi-quantum well structures as a function of quantum well numbers: Coupling behaviors of localized surface plasmon

Lee Woon Jang; Dae Woo Jeon; Ju Won Jeon; Myoung Kim; Min Kyu Kim; A. Y. Polyakov; Jin Woo Ju; Seung Jae Lee; Jong Hyeob Baek; Mun Seok Jeong; Yong Hwan Kim; In Hwan Lee

doi:10.1149/2.097205jes

Photoluminescence enhancement in GaNInGaN multi-quantum well structures as a function of quantum well numbers: Coupling behaviors of localized surface plasmon

Lee Woon Jang, Dae Woo Jeon, Ju Won Jeon, Myoung Kim, Min Kyu Kim, A. Y. Polyakov, Jin Woo Ju, Seung Jae Lee, Jong Hyeob Baek, Mun Seok Jeong, Yong Hwan Kim, In Hwan Lee

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Photoluminescence (PL) efficiency enhancement produced by deposition of Ag/SiO ₂ coreshell nanoparticles (NPs) on the GaNInGaN multi-quantum well structure was studied as a function of quantum well (QW) number in the structure. For back-surface laser excitation the strongest PL enhancement by 1.5 times was observed for single QW structure, the weakest for the 5QW structure. The result is ascribed to Ag/SiO ₂ NPs localized surface plasmons coupling to the MQW region and the dependence of the coupling efficiency on the distance to the NP layer. Simple modeling suggests that the coupling efficiency starts to decrease for distances higher than about 50 nm.

Original language	English
Pages (from-to)	H522-H524
Journal	Journal of the Electrochemical Society
Volume	159
Issue number	5
DOIs	https://doi.org/10.1149/2.097205jes
Publication status	Published - 2012
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Surfaces, Coatings and Films
Electrochemistry
Renewable Energy, Sustainability and the Environment

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1149/2.097205jes

Cite this

Jang, L. W., Jeon, D. W., Jeon, J. W., Kim, M., Kim, M. K., Polyakov, A. Y., Ju, J. W., Lee, S. J., Baek, J. H., Jeong, M. S., Kim, Y. H., & Lee, I. H. (2012). Photoluminescence enhancement in GaNInGaN multi-quantum well structures as a function of quantum well numbers: Coupling behaviors of localized surface plasmon. Journal of the Electrochemical Society, 159(5), H522-H524. https://doi.org/10.1149/2.097205jes

Jang, LW, Jeon, DW, Jeon, JW, Kim, M, Kim, MK, Polyakov, AY, Ju, JW, Lee, SJ, Baek, JH, Jeong, MS, Kim, YH & Lee, IH 2012, 'Photoluminescence enhancement in GaNInGaN multi-quantum well structures as a function of quantum well numbers: Coupling behaviors of localized surface plasmon', Journal of the Electrochemical Society, vol. 159, no. 5, pp. H522-H524. https://doi.org/10.1149/2.097205jes

@article{28a08b4ff66448bdb638c0b34272a58d,

title = "Photoluminescence enhancement in GaNInGaN multi-quantum well structures as a function of quantum well numbers: Coupling behaviors of localized surface plasmon",

abstract = "Photoluminescence (PL) efficiency enhancement produced by deposition of Ag/SiO 2 coreshell nanoparticles (NPs) on the GaNInGaN multi-quantum well structure was studied as a function of quantum well (QW) number in the structure. For back-surface laser excitation the strongest PL enhancement by 1.5 times was observed for single QW structure, the weakest for the 5QW structure. The result is ascribed to Ag/SiO 2 NPs localized surface plasmons coupling to the MQW region and the dependence of the coupling efficiency on the distance to the NP layer. Simple modeling suggests that the coupling efficiency starts to decrease for distances higher than about 50 nm.",

author = "Jang, {Lee Woon} and Jeon, {Dae Woo} and Jeon, {Ju Won} and Myoung Kim and Kim, {Min Kyu} and Polyakov, {A. Y.} and Ju, {Jin Woo} and Lee, {Seung Jae} and Baek, {Jong Hyeob} and Jeong, {Mun Seok} and Kim, {Yong Hwan} and Lee, {In Hwan}",

year = "2012",

doi = "10.1149/2.097205jes",

language = "English",

volume = "159",

pages = "H522--H524",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Electrochemical Society, Inc.",

number = "5",

}

TY - JOUR

T1 - Photoluminescence enhancement in GaNInGaN multi-quantum well structures as a function of quantum well numbers

T2 - Coupling behaviors of localized surface plasmon

AU - Jang, Lee Woon

AU - Jeon, Dae Woo

AU - Jeon, Ju Won

AU - Kim, Myoung

AU - Kim, Min Kyu

AU - Polyakov, A. Y.

AU - Ju, Jin Woo

AU - Lee, Seung Jae

AU - Baek, Jong Hyeob

AU - Jeong, Mun Seok

AU - Kim, Yong Hwan

AU - Lee, In Hwan

PY - 2012

Y1 - 2012

N2 - Photoluminescence (PL) efficiency enhancement produced by deposition of Ag/SiO 2 coreshell nanoparticles (NPs) on the GaNInGaN multi-quantum well structure was studied as a function of quantum well (QW) number in the structure. For back-surface laser excitation the strongest PL enhancement by 1.5 times was observed for single QW structure, the weakest for the 5QW structure. The result is ascribed to Ag/SiO 2 NPs localized surface plasmons coupling to the MQW region and the dependence of the coupling efficiency on the distance to the NP layer. Simple modeling suggests that the coupling efficiency starts to decrease for distances higher than about 50 nm.

AB - Photoluminescence (PL) efficiency enhancement produced by deposition of Ag/SiO 2 coreshell nanoparticles (NPs) on the GaNInGaN multi-quantum well structure was studied as a function of quantum well (QW) number in the structure. For back-surface laser excitation the strongest PL enhancement by 1.5 times was observed for single QW structure, the weakest for the 5QW structure. The result is ascribed to Ag/SiO 2 NPs localized surface plasmons coupling to the MQW region and the dependence of the coupling efficiency on the distance to the NP layer. Simple modeling suggests that the coupling efficiency starts to decrease for distances higher than about 50 nm.

UR - http://www.scopus.com/inward/record.url?scp=84859336597&partnerID=8YFLogxK

U2 - 10.1149/2.097205jes

DO - 10.1149/2.097205jes

M3 - Article

AN - SCOPUS:84859336597

SN - 0013-4651

VL - 159

SP - H522-H524

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 5

ER -

Photoluminescence enhancement in GaNInGaN multi-quantum well structures as a function of quantum well numbers: Coupling behaviors of localized surface plasmon

Abstract

ASJC Scopus subject areas

UN SDGs

Access to Document

Other files and links

Fingerprint

Cite this