Photoluminescence excitation spectroscopy of erbium-doped silicon-rich silicon oxide

Jung H. Shin; Se Young Seo; Sangsig Kim; S. G. Bishop

doi:10.1063/1.126234

Photoluminescence excitation spectroscopy of erbium-doped silicon-rich silicon oxide

Jung H. Shin, Se Young Seo, Sangsig Kim, S. G. Bishop

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

46 Citations (Scopus)

Abstract

The 1.54 μm Er³⁺ photoluminescence excitation (PLE) and photoluminescence (PL) spectra of erbium-doped silicon-rich silicon oxide (SRSO) are investigated. Between 350 and 820 nm, PLE spectra are broad and featureless, and the PL spectra are independent of the excitation wavelengths. The results indicate that in erbium-doped SRSO, the Er³⁺ luminescence is dominated by a single class of Er sites with a strong coupling to all the carriers in the silicon nanograins.

Original language	English
Pages (from-to)	1999-2001
Number of pages	3
Journal	Applied Physics Letters
Volume	76
Issue number	15
DOIs	https://doi.org/10.1063/1.126234
Publication status	Published - 2000 Apr 10

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Photoluminescence excitation spectroscopy of erbium-doped silicon-rich silicon oxide",

abstract = "The 1.54 μm Er3+ photoluminescence excitation (PLE) and photoluminescence (PL) spectra of erbium-doped silicon-rich silicon oxide (SRSO) are investigated. Between 350 and 820 nm, PLE spectra are broad and featureless, and the PL spectra are independent of the excitation wavelengths. The results indicate that in erbium-doped SRSO, the Er3+ luminescence is dominated by a single class of Er sites with a strong coupling to all the carriers in the silicon nanograins.",

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T1 - Photoluminescence excitation spectroscopy of erbium-doped silicon-rich silicon oxide

AU - Shin, Jung H.

AU - Seo, Se Young

AU - Kim, Sangsig

AU - Bishop, S. G.

PY - 2000/4/10

Y1 - 2000/4/10

N2 - The 1.54 μm Er3+ photoluminescence excitation (PLE) and photoluminescence (PL) spectra of erbium-doped silicon-rich silicon oxide (SRSO) are investigated. Between 350 and 820 nm, PLE spectra are broad and featureless, and the PL spectra are independent of the excitation wavelengths. The results indicate that in erbium-doped SRSO, the Er3+ luminescence is dominated by a single class of Er sites with a strong coupling to all the carriers in the silicon nanograins.

AB - The 1.54 μm Er3+ photoluminescence excitation (PLE) and photoluminescence (PL) spectra of erbium-doped silicon-rich silicon oxide (SRSO) are investigated. Between 350 and 820 nm, PLE spectra are broad and featureless, and the PL spectra are independent of the excitation wavelengths. The results indicate that in erbium-doped SRSO, the Er3+ luminescence is dominated by a single class of Er sites with a strong coupling to all the carriers in the silicon nanograins.

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U2 - 10.1063/1.126234

DO - 10.1063/1.126234

M3 - Article

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VL - 76

SP - 1999

EP - 2001

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

ER -

Photoluminescence excitation spectroscopy of erbium-doped silicon-rich silicon oxide

Abstract

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