Photoluminescence of Ga-doped ZnO film grown on c-Al2 O3 (0001) by plasma-assisted molecular beam epitaxy

H. C. Park; D. Byun; B. Angadi; D. Hee Park; W. K. Choi; J. W. Choi; Y. S. Jung

doi:10.1063/1.2783956

Photoluminescence of Ga-doped ZnO film grown on c-Al2 O3 (0001) by plasma-assisted molecular beam epitaxy

H. C. Park, D. Byun, B. Angadi, D. Hee Park, W. K. Choi, J. W. Choi, Y. S. Jung

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Abstract

High quality gallium doped ZnO (Ga:ZnO) thin films were grown on c- Al2 O3 (1000) by plasma-assisted molecular beam epitaxy, and Ga concentration NGa was controlled in the range of 1× 1018 -2.5× 1020 cm3 by adjustingchanging the Ga cell temperature. From the low-temperature photoluminescence at 10 K, the donor bound exciton I8 related to Ga impurity was clearly observed and confirmed by comparing the calculated activation energy of 16.8 meV of the emission peak intensity with the known localization energy, 16.1 meV. Observed asymmetric broadening with a long tail on the lower energy side in the photoluminescence (PL) emission line shape could be fitted by the Stark effect and the compensation ratio was approximately 14-17% at NGa 1× 1020 cm3. The measured broadening of photoluminescence PL emission is in good agreement with the total thermal broadening and potential fluctuations caused by random distribution of impurity at NGa lower than the Mott critical density.

Original language	English
Article number	073114
Journal	Journal of Applied Physics
Volume	102
Issue number	7
DOIs	https://doi.org/10.1063/1.2783956
Publication status	Published - 2007

Bibliographical note

Funding Information:
This work is financially supported by both the KIST Future-Resource Program (2E19880) and the KOSEF Program under Contract No. R01-2004-000-10715-09.

ASJC Scopus subject areas

General Physics and Astronomy

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@article{efb525596e9140ed92101616531a73d4,

title = "Photoluminescence of Ga-doped ZnO film grown on c-Al2 O3 (0001) by plasma-assisted molecular beam epitaxy",

abstract = "High quality gallium doped ZnO (Ga:ZnO) thin films were grown on c- Al2 O3 (1000) by plasma-assisted molecular beam epitaxy, and Ga concentration NGa was controlled in the range of 1× 1018 -2.5× 1020 cm3 by adjustingchanging the Ga cell temperature. From the low-temperature photoluminescence at 10 K, the donor bound exciton I8 related to Ga impurity was clearly observed and confirmed by comparing the calculated activation energy of 16.8 meV of the emission peak intensity with the known localization energy, 16.1 meV. Observed asymmetric broadening with a long tail on the lower energy side in the photoluminescence (PL) emission line shape could be fitted by the Stark effect and the compensation ratio was approximately 14-17% at NGa 1× 1020 cm3. The measured broadening of photoluminescence PL emission is in good agreement with the total thermal broadening and potential fluctuations caused by random distribution of impurity at NGa lower than the Mott critical density.",

author = "Park, {H. C.} and D. Byun and B. Angadi and {Hee Park}, D. and Choi, {W. K.} and Choi, {J. W.} and Jung, {Y. S.}",

note = "Funding Information: This work is financially supported by both the KIST Future-Resource Program (2E19880) and the KOSEF Program under Contract No. R01-2004-000-10715-09. ",

year = "2007",

doi = "10.1063/1.2783956",

language = "English",

volume = "102",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

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T1 - Photoluminescence of Ga-doped ZnO film grown on c-Al2 O3 (0001) by plasma-assisted molecular beam epitaxy

AU - Park, H. C.

AU - Byun, D.

AU - Angadi, B.

AU - Hee Park, D.

AU - Choi, W. K.

AU - Choi, J. W.

AU - Jung, Y. S.

N1 - Funding Information: This work is financially supported by both the KIST Future-Resource Program (2E19880) and the KOSEF Program under Contract No. R01-2004-000-10715-09.

PY - 2007

Y1 - 2007

N2 - High quality gallium doped ZnO (Ga:ZnO) thin films were grown on c- Al2 O3 (1000) by plasma-assisted molecular beam epitaxy, and Ga concentration NGa was controlled in the range of 1× 1018 -2.5× 1020 cm3 by adjustingchanging the Ga cell temperature. From the low-temperature photoluminescence at 10 K, the donor bound exciton I8 related to Ga impurity was clearly observed and confirmed by comparing the calculated activation energy of 16.8 meV of the emission peak intensity with the known localization energy, 16.1 meV. Observed asymmetric broadening with a long tail on the lower energy side in the photoluminescence (PL) emission line shape could be fitted by the Stark effect and the compensation ratio was approximately 14-17% at NGa 1× 1020 cm3. The measured broadening of photoluminescence PL emission is in good agreement with the total thermal broadening and potential fluctuations caused by random distribution of impurity at NGa lower than the Mott critical density.

AB - High quality gallium doped ZnO (Ga:ZnO) thin films were grown on c- Al2 O3 (1000) by plasma-assisted molecular beam epitaxy, and Ga concentration NGa was controlled in the range of 1× 1018 -2.5× 1020 cm3 by adjustingchanging the Ga cell temperature. From the low-temperature photoluminescence at 10 K, the donor bound exciton I8 related to Ga impurity was clearly observed and confirmed by comparing the calculated activation energy of 16.8 meV of the emission peak intensity with the known localization energy, 16.1 meV. Observed asymmetric broadening with a long tail on the lower energy side in the photoluminescence (PL) emission line shape could be fitted by the Stark effect and the compensation ratio was approximately 14-17% at NGa 1× 1020 cm3. The measured broadening of photoluminescence PL emission is in good agreement with the total thermal broadening and potential fluctuations caused by random distribution of impurity at NGa lower than the Mott critical density.

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SN - 0021-8979

VL - 102

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 7

M1 - 073114

ER -

Photoluminescence of Ga-doped ZnO film grown on c-Al2 O3 (0001) by plasma-assisted molecular beam epitaxy

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