Photoluminescence of ZnO nanowires dependent on O2 and Ar annealing

Byeongchul Ha; Heon Ham; Cheol Jin Lee

doi:10.1016/j.jpcs.2008.04.041

Photoluminescence of ZnO nanowires dependent on O₂ and Ar annealing

Byeongchul Ha, Heon Ham, Cheol Jin Lee

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

59 Citations (Scopus)

Abstract

High-purity ZnO nanowires have been synthesized on Si substrates without the presence of a catalyst at 600 °C by a simple thermal vapor technique. Photoluminescence (PL) spectra of the annealed samples at 900 °C under oxygen and argon gases have been investigated. After O₂ or Ar annealing, the PL visible-emission intensity that is related to intrinsic defects (oxygen vacancies) is greatly reduced compared with as-grown ZnO nanowires because the oxygen-gas ions or oxygen interstitials diffuse into the oxygen vacancies during annealing process. The blue-band peak of the O₂- or Ar-annealed ZnO naonowires is also smaller than the green-band peak in the visible broadband because of the reduction of oxygen vacancies. Therefore, the main intrinsic defects (oxygen vacancies) of as-grown ZnO nanowires can be reduced by O₂ or Ar annealing, which is an important procedure for the development of advanced optoelectronic ZnO nanowire devices.

Original language	English
Pages (from-to)	2453-2456
Number of pages	4
Journal	Journal of Physics and Chemistry of Solids
Volume	69
Issue number	10
DOIs	https://doi.org/10.1016/j.jpcs.2008.04.041
Publication status	Published - 2008 Oct

Keywords

A. Nanostructures
A. Optical materials
D. Defects
D. Luminescence
D. Optical properties

ASJC Scopus subject areas

Chemistry(all)
Materials Science(all)
Condensed Matter Physics

Access to Document

10.1016/j.jpcs.2008.04.041

Cite this

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title = "Photoluminescence of ZnO nanowires dependent on O2 and Ar annealing",

abstract = "High-purity ZnO nanowires have been synthesized on Si substrates without the presence of a catalyst at 600 °C by a simple thermal vapor technique. Photoluminescence (PL) spectra of the annealed samples at 900 °C under oxygen and argon gases have been investigated. After O2 or Ar annealing, the PL visible-emission intensity that is related to intrinsic defects (oxygen vacancies) is greatly reduced compared with as-grown ZnO nanowires because the oxygen-gas ions or oxygen interstitials diffuse into the oxygen vacancies during annealing process. The blue-band peak of the O2- or Ar-annealed ZnO naonowires is also smaller than the green-band peak in the visible broadband because of the reduction of oxygen vacancies. Therefore, the main intrinsic defects (oxygen vacancies) of as-grown ZnO nanowires can be reduced by O2 or Ar annealing, which is an important procedure for the development of advanced optoelectronic ZnO nanowire devices.",

keywords = "A. Nanostructures, A. Optical materials, D. Defects, D. Luminescence, D. Optical properties",

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AU - Ha, Byeongchul

AU - Ham, Heon

AU - Lee, Cheol Jin

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N2 - High-purity ZnO nanowires have been synthesized on Si substrates without the presence of a catalyst at 600 °C by a simple thermal vapor technique. Photoluminescence (PL) spectra of the annealed samples at 900 °C under oxygen and argon gases have been investigated. After O2 or Ar annealing, the PL visible-emission intensity that is related to intrinsic defects (oxygen vacancies) is greatly reduced compared with as-grown ZnO nanowires because the oxygen-gas ions or oxygen interstitials diffuse into the oxygen vacancies during annealing process. The blue-band peak of the O2- or Ar-annealed ZnO naonowires is also smaller than the green-band peak in the visible broadband because of the reduction of oxygen vacancies. Therefore, the main intrinsic defects (oxygen vacancies) of as-grown ZnO nanowires can be reduced by O2 or Ar annealing, which is an important procedure for the development of advanced optoelectronic ZnO nanowire devices.

AB - High-purity ZnO nanowires have been synthesized on Si substrates without the presence of a catalyst at 600 °C by a simple thermal vapor technique. Photoluminescence (PL) spectra of the annealed samples at 900 °C under oxygen and argon gases have been investigated. After O2 or Ar annealing, the PL visible-emission intensity that is related to intrinsic defects (oxygen vacancies) is greatly reduced compared with as-grown ZnO nanowires because the oxygen-gas ions or oxygen interstitials diffuse into the oxygen vacancies during annealing process. The blue-band peak of the O2- or Ar-annealed ZnO naonowires is also smaller than the green-band peak in the visible broadband because of the reduction of oxygen vacancies. Therefore, the main intrinsic defects (oxygen vacancies) of as-grown ZnO nanowires can be reduced by O2 or Ar annealing, which is an important procedure for the development of advanced optoelectronic ZnO nanowire devices.

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KW - A. Optical materials

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