Photosensitive cadmium telluride thin-film fieldeffect transistors

Gwangseok Yang; Donghwan Kim; Jihyun Kim

doi:10.1364/OE.24.003607

Photosensitive cadmium telluride thin-film fieldeffect transistors

Gwangseok Yang, Donghwan Kim, Jihyun Kim

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

We report on the graphene-seeded growth and fabrication of photosensitive Cadmium telluride (CdTe)/graphene hybrid field-effect transistors (FETs) subjected to a post-growth activation process. CdTe thin films were selectively grown on pre-defined graphene, and their morphological, electrical and optoelectronic properties were systemically analyzed before and after the CdCl₂ activation process. CdCl₂-activated CdTe FETs showed p-type behavior with improved electrical features, including higher electrical conductivity (reduced sheet resistance from 1.09 × 10⁹ to 5.55 × 10⁷ Ω/sq.), higher mobility (from 0.025 to 0.20 cm²/(V·s)), and faster rise time (from 1.23 to 0.43 s). A post-growth activation process is essential to fabricate high-performance photosensitive CdTe/graphene hybrid devices.

Original language	English
Pages (from-to)	3607-3612
Number of pages	6
Journal	Optics Express
Volume	24
Issue number	4
DOIs	https://doi.org/10.1364/OE.24.003607
Publication status	Published - 2016 Feb 22

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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title = "Photosensitive cadmium telluride thin-film fieldeffect transistors",

abstract = "We report on the graphene-seeded growth and fabrication of photosensitive Cadmium telluride (CdTe)/graphene hybrid field-effect transistors (FETs) subjected to a post-growth activation process. CdTe thin films were selectively grown on pre-defined graphene, and their morphological, electrical and optoelectronic properties were systemically analyzed before and after the CdCl2 activation process. CdCl2-activated CdTe FETs showed p-type behavior with improved electrical features, including higher electrical conductivity (reduced sheet resistance from 1.09 × 109 to 5.55 × 107 Ω/sq.), higher mobility (from 0.025 to 0.20 cm2/(V·s)), and faster rise time (from 1.23 to 0.43 s). A post-growth activation process is essential to fabricate high-performance photosensitive CdTe/graphene hybrid devices.",

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AU - Kim, Donghwan

AU - Kim, Jihyun

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AB - We report on the graphene-seeded growth and fabrication of photosensitive Cadmium telluride (CdTe)/graphene hybrid field-effect transistors (FETs) subjected to a post-growth activation process. CdTe thin films were selectively grown on pre-defined graphene, and their morphological, electrical and optoelectronic properties were systemically analyzed before and after the CdCl2 activation process. CdCl2-activated CdTe FETs showed p-type behavior with improved electrical features, including higher electrical conductivity (reduced sheet resistance from 1.09 × 109 to 5.55 × 107 Ω/sq.), higher mobility (from 0.025 to 0.20 cm2/(V·s)), and faster rise time (from 1.23 to 0.43 s). A post-growth activation process is essential to fabricate high-performance photosensitive CdTe/graphene hybrid devices.

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Photosensitive cadmium telluride thin-film fieldeffect transistors

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