Photovoltaic Field-Effect Transistors Using a MoS2 and Organic Rubrene van der Waals Hybrid

Cheol Joon Park, Hyeon Jung Park, Jae Yoon Lee, Jeongyong Kim, Chul Ho Lee, Jinsoo Joo

Research output: Contribution to journalArticlepeer-review

47 Citations (Scopus)


A several-layer n-type MoS2 was partially hybridized with an organic crystalline p-type rubrene nanosheet through van der Waals interactions to fabricate a two-dimensional (2-D) lateral-type n-p heterojunction optoelectronic device. The field-effect transistors (FETs) using lateral-type MoS2/rubrene hybrids exhibited both gate-tunable diode and anti-ambipolar transistor characteristics. The FET devices show the coexistence of n-type states, p-type states, and off-states controlled by the gate bias. From the photocurrent mapping experiments, the gate-bias-dependent photovoltaic effect was observed from the heterojunction regions of the MoS2/rubrene FETs. Furthermore, the photovoltaic FETs were successfully operated by light irradiation without applying source-drain bias and controlled using gate bias. These devices represent new solar-energy-driven 2-D multifunctional electronic devices.

Original languageEnglish
Pages (from-to)29848-29856
Number of pages9
JournalACS Applied Materials and Interfaces
Issue number35
Publication statusPublished - 2018 Sept 5

Bibliographical note

Funding Information:
This research was supported by the National Research Foundation of Korea (NRF) grants funded by the Korean government (nos. 2015R1A2A2A01003805, 2018R1A2B2006369 and 2017R1D1A1B03035441) and by the Center for Advanced Meta Materials (CAMM, as the Global Frontier Project no. 2014M3A6B3063710). C.-H.L. acknowledges the support from the KU-KIST School Project.

Publisher Copyright:
© 2018 American Chemical Society.


  • ambipolar
  • molybdenum disulfide
  • photovoltaic
  • rubrene
  • transistor

ASJC Scopus subject areas

  • General Materials Science


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