Photovoltaic Field-Effect Transistors Using a MoS2 and Organic Rubrene van der Waals Hybrid

Cheol Joon Park; Hyeon Jung Park; Jae Yoon Lee; Jeongyong Kim; Chul Ho Lee; Jinsoo Joo

doi:10.1021/acsami.8b11559

Photovoltaic Field-Effect Transistors Using a MoS₂ and Organic Rubrene van der Waals Hybrid

Cheol Joon Park
, Hyeon Jung Park
, Jae Yoon Lee
, Jeongyong Kim
, Chul Ho Lee
, Jinsoo Joo^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

52 Citations (Scopus)

Abstract

A several-layer n-type MoS₂ was partially hybridized with an organic crystalline p-type rubrene nanosheet through van der Waals interactions to fabricate a two-dimensional (2-D) lateral-type n-p heterojunction optoelectronic device. The field-effect transistors (FETs) using lateral-type MoS₂/rubrene hybrids exhibited both gate-tunable diode and anti-ambipolar transistor characteristics. The FET devices show the coexistence of n-type states, p-type states, and off-states controlled by the gate bias. From the photocurrent mapping experiments, the gate-bias-dependent photovoltaic effect was observed from the heterojunction regions of the MoS₂/rubrene FETs. Furthermore, the photovoltaic FETs were successfully operated by light irradiation without applying source-drain bias and controlled using gate bias. These devices represent new solar-energy-driven 2-D multifunctional electronic devices.

Original language	English
Pages (from-to)	29848-29856
Number of pages	9
Journal	ACS Applied Materials and Interfaces
Volume	10
Issue number	35
DOIs	https://doi.org/10.1021/acsami.8b11559
Publication status	Published - 2018 Sept 5

Bibliographical note

Funding Information:
This research was supported by the National Research Foundation of Korea (NRF) grants funded by the Korean government (nos. 2015R1A2A2A01003805, 2018R1A2B2006369 and 2017R1D1A1B03035441) and by the Center for Advanced Meta Materials (CAMM, as the Global Frontier Project no. 2014M3A6B3063710). C.-H.L. acknowledges the support from the KU-KIST School Project.

Publisher Copyright:
© 2018 American Chemical Society.

Keywords

ambipolar
molybdenum disulfide
photovoltaic
rubrene
transistor

ASJC Scopus subject areas

General Materials Science

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1021/acsami.8b11559

Cite this

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title = "Photovoltaic Field-Effect Transistors Using a MoS2 and Organic Rubrene van der Waals Hybrid",

abstract = "A several-layer n-type MoS2 was partially hybridized with an organic crystalline p-type rubrene nanosheet through van der Waals interactions to fabricate a two-dimensional (2-D) lateral-type n-p heterojunction optoelectronic device. The field-effect transistors (FETs) using lateral-type MoS2/rubrene hybrids exhibited both gate-tunable diode and anti-ambipolar transistor characteristics. The FET devices show the coexistence of n-type states, p-type states, and off-states controlled by the gate bias. From the photocurrent mapping experiments, the gate-bias-dependent photovoltaic effect was observed from the heterojunction regions of the MoS2/rubrene FETs. Furthermore, the photovoltaic FETs were successfully operated by light irradiation without applying source-drain bias and controlled using gate bias. These devices represent new solar-energy-driven 2-D multifunctional electronic devices.",

keywords = "ambipolar, molybdenum disulfide, photovoltaic, rubrene, transistor",

author = "Park, \{Cheol Joon\} and Park, \{Hyeon Jung\} and Lee, \{Jae Yoon\} and Jeongyong Kim and Lee, \{Chul Ho\} and Jinsoo Joo",

note = "Funding Information: This research was supported by the National Research Foundation of Korea (NRF) grants funded by the Korean government (nos. 2015R1A2A2A01003805, 2018R1A2B2006369 and 2017R1D1A1B03035441) and by the Center for Advanced Meta Materials (CAMM, as the Global Frontier Project no. 2014M3A6B3063710). C.-H.L. acknowledges the support from the KU-KIST School Project. Publisher Copyright: {\textcopyright} 2018 American Chemical Society.",

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AU - Lee, Chul Ho

AU - Joo, Jinsoo

N1 - Funding Information: This research was supported by the National Research Foundation of Korea (NRF) grants funded by the Korean government (nos. 2015R1A2A2A01003805, 2018R1A2B2006369 and 2017R1D1A1B03035441) and by the Center for Advanced Meta Materials (CAMM, as the Global Frontier Project no. 2014M3A6B3063710). C.-H.L. acknowledges the support from the KU-KIST School Project. Publisher Copyright: © 2018 American Chemical Society.

PY - 2018/9/5

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N2 - A several-layer n-type MoS2 was partially hybridized with an organic crystalline p-type rubrene nanosheet through van der Waals interactions to fabricate a two-dimensional (2-D) lateral-type n-p heterojunction optoelectronic device. The field-effect transistors (FETs) using lateral-type MoS2/rubrene hybrids exhibited both gate-tunable diode and anti-ambipolar transistor characteristics. The FET devices show the coexistence of n-type states, p-type states, and off-states controlled by the gate bias. From the photocurrent mapping experiments, the gate-bias-dependent photovoltaic effect was observed from the heterojunction regions of the MoS2/rubrene FETs. Furthermore, the photovoltaic FETs were successfully operated by light irradiation without applying source-drain bias and controlled using gate bias. These devices represent new solar-energy-driven 2-D multifunctional electronic devices.

AB - A several-layer n-type MoS2 was partially hybridized with an organic crystalline p-type rubrene nanosheet through van der Waals interactions to fabricate a two-dimensional (2-D) lateral-type n-p heterojunction optoelectronic device. The field-effect transistors (FETs) using lateral-type MoS2/rubrene hybrids exhibited both gate-tunable diode and anti-ambipolar transistor characteristics. The FET devices show the coexistence of n-type states, p-type states, and off-states controlled by the gate bias. From the photocurrent mapping experiments, the gate-bias-dependent photovoltaic effect was observed from the heterojunction regions of the MoS2/rubrene FETs. Furthermore, the photovoltaic FETs were successfully operated by light irradiation without applying source-drain bias and controlled using gate bias. These devices represent new solar-energy-driven 2-D multifunctional electronic devices.

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