Physical and electrical characteristics of atomic-layer-deposited Hf-silicate thin films using Hf[N(CH 3)(C 2H 5)] 4 and SiH[N(CH 3) 2] 3 precursors

K. B. Chung, C. N. Whang, M. H. Cho, C. J. Yim, D. H. Ko, Y. S. Kim, M. J. Kim, J. H. Lee, N. I. Lee

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