TY - JOUR
T1 - Physical properties of crystalline NaNbO3 thin film grown on Sr2Nb3O10 nanosheets at low temperatures for piezoelectric energy harvesters
AU - Woo, Jong Un
AU - Kim, In Su
AU - Kim, Bumjoo
AU - Nahm, Sahn
N1 - Funding Information:
This research was supported by National R&D Programs through the National Research Foundation of Korea (NRF) funded by the Ministry of Science and ICT (2020R1A2B5B01002063). We also thank the KU-KIST Graduate School Program of Korea University.
Funding Information:
This research was supported by National R&D Programs through the National Research Foundation of Korea (NRF) funded by the Ministry of Science and ICT (2020R1A2B5B01002063). We also thank the KU-KIST Graduate School Program of Korea University.
Publisher Copyright:
© 2022 Elsevier B.V.
PY - 2022/8/15
Y1 - 2022/8/15
N2 - A Sr2Nb3O10 (SN) monolayer deposited on Pt/SiO2/Si (PSS) was employed as the template for the growth of crystalline NaNbO3 (NNO) thin films at low temperatures. The [0 0 1]-oriented crystalline NNO film was effectively grown on SN/PSS at 250 °C. This NNO film showed a small εr of 115, along with good insulating properties with a low leakage-current density (4.5 × 10–6 A/cm2 at 0.3 MV/cm). This NNO film displayed a large d33 of 123 pC/N, which is the largest d33 value for NNO films to date. Moreover, it shows a very large d33 × g33 (14.8 × 10–12 m2/N), which is the figure of merit for the power of piezoelectric energy harvesters (PEHs). The NNO film grown on SN/Ni at 250 °C for the fabrication of PEH also demonstrated dielectric and piezoelectric characteristics. The NNO PEH exhibited a high power density (2.1 μW/mm3), indicating that the [0 0 1]-oriented NNO film grown on the SN seed layer is a good candidate for PEH. Moreover, this NNO film can be deposited on a polymer substrate and utilized as a future flexible device owing to its very low growth temperature and good physical properties.
AB - A Sr2Nb3O10 (SN) monolayer deposited on Pt/SiO2/Si (PSS) was employed as the template for the growth of crystalline NaNbO3 (NNO) thin films at low temperatures. The [0 0 1]-oriented crystalline NNO film was effectively grown on SN/PSS at 250 °C. This NNO film showed a small εr of 115, along with good insulating properties with a low leakage-current density (4.5 × 10–6 A/cm2 at 0.3 MV/cm). This NNO film displayed a large d33 of 123 pC/N, which is the largest d33 value for NNO films to date. Moreover, it shows a very large d33 × g33 (14.8 × 10–12 m2/N), which is the figure of merit for the power of piezoelectric energy harvesters (PEHs). The NNO film grown on SN/Ni at 250 °C for the fabrication of PEH also demonstrated dielectric and piezoelectric characteristics. The NNO PEH exhibited a high power density (2.1 μW/mm3), indicating that the [0 0 1]-oriented NNO film grown on the SN seed layer is a good candidate for PEH. Moreover, this NNO film can be deposited on a polymer substrate and utilized as a future flexible device owing to its very low growth temperature and good physical properties.
KW - Low-temperature deposition process
KW - Piezoelectric energy harvester
KW - SN nanosheet seed layer
KW - [0 0 1]-oriented crystalline NNO thin film
UR - http://www.scopus.com/inward/record.url?scp=85129467724&partnerID=8YFLogxK
U2 - 10.1016/j.apsusc.2022.153464
DO - 10.1016/j.apsusc.2022.153464
M3 - Article
AN - SCOPUS:85129467724
SN - 0169-4332
VL - 593
JO - Applied Surface Science
JF - Applied Surface Science
M1 - 153464
ER -