Physical Properties of (Na1- xK x)NbO3 Thin Film Grown at Low Temperature Using Two-Dimensional Ca2Nb3O10 Nanosheet Seed Layer

Sang Hyo Kweon; Jong Hyun Kim; Mir Im; Woong Hee Lee; Sahn Nahm

doi:10.1021/acsami.8b09482

Physical Properties of (Na_{1- x}K _x)NbO₃ Thin Film Grown at Low Temperature Using Two-Dimensional Ca₂Nb₃O₁₀ Nanosheet Seed Layer

Sang Hyo Kweon, Jong Hyun Kim, Mir Im, Woong Hee Lee, Sahn Nahm

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

A monolayer Ca₂Nb₃O₁₀ (CNO) nanosheet was deposited on a Pt/Ti/SiO₂/Si substrate using the Langmuir-Blodgett method. This monolayer CNO nanosheet with a (001) surface termination was used as a seed layer to reduce the growth temperature of the crystalline (Na_1-xK_x)NbO₃ (NKN) film. The crystalline NKN film was preferentially grown along the [001] direction at 400 °C. The ferroelectric and piezoelectric properties of this NKN film were influenced by the postannealing atmosphere due to the variations in the amounts of oxygen vacancies in the NKN film. The crystalline NKN film annealed at 300 °C under 50 Torr O₂ atmosphere showed promising ferroelectric and piezoelectric properties; ϵ_r of 303 and tan δ of 2.0% at 100 kHz, P_s of 15.3 μC/cm², P_r of 11.7 μC/cm², and E_c of 78 kV/cm, and d₃₃ of 139 pm/V. This NKN film showed the lowest leakage current, which can be explained by the Schottky emission mechanism. The Schottky barrier heights of the Pt/NKN and NKN/CNO/Pt interfaces were calculated to be 0.97 and 0.28 eV, respectively. The results of this work suggest a new method to grow crystalline thin films at low temperatures by using metal-oxide nanosheets as the seed layer.

Original language	English
Pages (from-to)	25536-25546
Number of pages	11
Journal	ACS Applied Materials and Interfaces
Volume	10
Issue number	30
DOIs	https://doi.org/10.1021/acsami.8b09482
Publication status	Published - 2018 Aug 1

Bibliographical note

Funding Information:
This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (2017R1A2B4007189). Moreover, the authors also thank the KU-KIST graduate school program of Korea University.

Publisher Copyright:
© Copyright 2018 American Chemical Society.

Keywords

lead-free
low-temperature deposition
nanosheet
piezoelectric thin film
preferred orientation
seed layer

ASJC Scopus subject areas

General Materials Science

Access to Document

10.1021/acsami.8b09482

Cite this

@article{a8c7e2197cad429186ba8329e8c78fc9,

title = "Physical Properties of (Na1- xK x)NbO3 Thin Film Grown at Low Temperature Using Two-Dimensional Ca2Nb3O10 Nanosheet Seed Layer",

abstract = "A monolayer Ca2Nb3O10 (CNO) nanosheet was deposited on a Pt/Ti/SiO2/Si substrate using the Langmuir-Blodgett method. This monolayer CNO nanosheet with a (001) surface termination was used as a seed layer to reduce the growth temperature of the crystalline (Na1-xKx)NbO3 (NKN) film. The crystalline NKN film was preferentially grown along the [001] direction at 400 °C. The ferroelectric and piezoelectric properties of this NKN film were influenced by the postannealing atmosphere due to the variations in the amounts of oxygen vacancies in the NKN film. The crystalline NKN film annealed at 300 °C under 50 Torr O2 atmosphere showed promising ferroelectric and piezoelectric properties; ϵr of 303 and tan δ of 2.0% at 100 kHz, Ps of 15.3 μC/cm2, Pr of 11.7 μC/cm2, and Ec of 78 kV/cm, and d33 of 139 pm/V. This NKN film showed the lowest leakage current, which can be explained by the Schottky emission mechanism. The Schottky barrier heights of the Pt/NKN and NKN/CNO/Pt interfaces were calculated to be 0.97 and 0.28 eV, respectively. The results of this work suggest a new method to grow crystalline thin films at low temperatures by using metal-oxide nanosheets as the seed layer.",

keywords = "lead-free, low-temperature deposition, nanosheet, piezoelectric thin film, preferred orientation, seed layer",

author = "Kweon, {Sang Hyo} and Kim, {Jong Hyun} and Mir Im and Lee, {Woong Hee} and Sahn Nahm",

note = "Funding Information: This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (2017R1A2B4007189). Moreover, the authors also thank the KU-KIST graduate school program of Korea University. Publisher Copyright: {\textcopyright} Copyright 2018 American Chemical Society.",

year = "2018",

month = aug,

day = "1",

doi = "10.1021/acsami.8b09482",

language = "English",

volume = "10",

pages = "25536--25546",

journal = "ACS Applied Materials and Interfaces",

issn = "1944-8244",

publisher = "American Chemical Society",

number = "30",

}

TY - JOUR

T1 - Physical Properties of (Na1- xK x)NbO3 Thin Film Grown at Low Temperature Using Two-Dimensional Ca2Nb3O10 Nanosheet Seed Layer

AU - Kweon, Sang Hyo

AU - Kim, Jong Hyun

AU - Im, Mir

AU - Lee, Woong Hee

AU - Nahm, Sahn

N1 - Funding Information: This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (2017R1A2B4007189). Moreover, the authors also thank the KU-KIST graduate school program of Korea University. Publisher Copyright: © Copyright 2018 American Chemical Society.

PY - 2018/8/1

Y1 - 2018/8/1

N2 - A monolayer Ca2Nb3O10 (CNO) nanosheet was deposited on a Pt/Ti/SiO2/Si substrate using the Langmuir-Blodgett method. This monolayer CNO nanosheet with a (001) surface termination was used as a seed layer to reduce the growth temperature of the crystalline (Na1-xKx)NbO3 (NKN) film. The crystalline NKN film was preferentially grown along the [001] direction at 400 °C. The ferroelectric and piezoelectric properties of this NKN film were influenced by the postannealing atmosphere due to the variations in the amounts of oxygen vacancies in the NKN film. The crystalline NKN film annealed at 300 °C under 50 Torr O2 atmosphere showed promising ferroelectric and piezoelectric properties; ϵr of 303 and tan δ of 2.0% at 100 kHz, Ps of 15.3 μC/cm2, Pr of 11.7 μC/cm2, and Ec of 78 kV/cm, and d33 of 139 pm/V. This NKN film showed the lowest leakage current, which can be explained by the Schottky emission mechanism. The Schottky barrier heights of the Pt/NKN and NKN/CNO/Pt interfaces were calculated to be 0.97 and 0.28 eV, respectively. The results of this work suggest a new method to grow crystalline thin films at low temperatures by using metal-oxide nanosheets as the seed layer.

AB - A monolayer Ca2Nb3O10 (CNO) nanosheet was deposited on a Pt/Ti/SiO2/Si substrate using the Langmuir-Blodgett method. This monolayer CNO nanosheet with a (001) surface termination was used as a seed layer to reduce the growth temperature of the crystalline (Na1-xKx)NbO3 (NKN) film. The crystalline NKN film was preferentially grown along the [001] direction at 400 °C. The ferroelectric and piezoelectric properties of this NKN film were influenced by the postannealing atmosphere due to the variations in the amounts of oxygen vacancies in the NKN film. The crystalline NKN film annealed at 300 °C under 50 Torr O2 atmosphere showed promising ferroelectric and piezoelectric properties; ϵr of 303 and tan δ of 2.0% at 100 kHz, Ps of 15.3 μC/cm2, Pr of 11.7 μC/cm2, and Ec of 78 kV/cm, and d33 of 139 pm/V. This NKN film showed the lowest leakage current, which can be explained by the Schottky emission mechanism. The Schottky barrier heights of the Pt/NKN and NKN/CNO/Pt interfaces were calculated to be 0.97 and 0.28 eV, respectively. The results of this work suggest a new method to grow crystalline thin films at low temperatures by using metal-oxide nanosheets as the seed layer.

KW - lead-free

KW - low-temperature deposition

KW - nanosheet

KW - piezoelectric thin film

KW - preferred orientation

KW - seed layer

UR - http://www.scopus.com/inward/record.url?scp=85049861925&partnerID=8YFLogxK

U2 - 10.1021/acsami.8b09482

DO - 10.1021/acsami.8b09482

M3 - Article

C2 - 29984994

AN - SCOPUS:85049861925

SN - 1944-8244

VL - 10

SP - 25536

EP - 25546

JO - ACS Applied Materials and Interfaces

JF - ACS Applied Materials and Interfaces

IS - 30

ER -