TY - GEN
T1 - Physically Unclonable Function Using Ring Oscillator Collapse in 0.5 v Near-Threshold Voltage for Low-Power Internet of Things
AU - Yoo, Jeongsik
AU - Kim, Doyoun
AU - Park, Hyunsu
AU - Shim, Minseob
AU - Lee, Choonghwan
AU - Kim, Chulwoo
N1 - Funding Information:
This work was supported by the IT R&D program of MOTIE/KEIT, [10052716, Design technology development of ultra-low voltage operating circuit and IP for smart sensor SoC] and fabrication was supported by Samsung Electronics.
Publisher Copyright:
© 2018 IEEE.
PY - 2018/11/28
Y1 - 2018/11/28
N2 - Many Internet of Things (IoT) devices have special and demanding design requirements, including limited energy, size, storage and processing capabilities. In addition, many IoT devices may be deployed in public places, making them vulnerable to physical attacks and replication attacks. Therefore, IoT devices are required to provide a solid security against duplication and counterfeiting even with these restrictions. To solve this problem, we propose a low-power physical unclonable function (PUF) for IoTs. The proposed low-power PUF at 0.5 V supply voltage (in near-threshold voltage region) achieves an energy efficiency of 36.7 pJ/b by lowering the bias voltage extremely and operates stably from -20°C to 60°C. In this paper, PUF for low-power IoTs is implemented in a 28-nm CMOS process and occupies 10801μm 2 area.
AB - Many Internet of Things (IoT) devices have special and demanding design requirements, including limited energy, size, storage and processing capabilities. In addition, many IoT devices may be deployed in public places, making them vulnerable to physical attacks and replication attacks. Therefore, IoT devices are required to provide a solid security against duplication and counterfeiting even with these restrictions. To solve this problem, we propose a low-power physical unclonable function (PUF) for IoTs. The proposed low-power PUF at 0.5 V supply voltage (in near-threshold voltage region) achieves an energy efficiency of 36.7 pJ/b by lowering the bias voltage extremely and operates stably from -20°C to 60°C. In this paper, PUF for low-power IoTs is implemented in a 28-nm CMOS process and occupies 10801μm 2 area.
KW - Chip ID
KW - Internet of things (IoT)
KW - Near-threshold voltage (NTV)
KW - Physically unclonable function (PUF)
UR - http://www.scopus.com/inward/record.url?scp=85060058811&partnerID=8YFLogxK
U2 - 10.1109/ICCE-ASIA.2018.8552142
DO - 10.1109/ICCE-ASIA.2018.8552142
M3 - Conference contribution
AN - SCOPUS:85060058811
T3 - 2018 IEEE International Conference on Consumer Electronics - Asia, ICCE-Asia 2018
BT - 2018 IEEE International Conference on Consumer Electronics - Asia, ICCE-Asia 2018
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2018 IEEE International Conference on Consumer Electronics - Asia, ICCE-Asia 2018
Y2 - 24 June 2018 through 26 June 2018
ER -