Piezoelectric properties of (Na, K)(Nb, Sb)O3-CaZrO3thin film grown on Sr2Nb3O10perovskite oxide nanosheet at low temperatures

Ho Sung Shin; In Su Kim; Jong Un Woo; Seok June Chae; Bumjoo Kim; Sahn Nahm

doi:10.1063/5.0106010

Piezoelectric properties of (Na, K)(Nb, Sb)O₃-CaZrO₃thin film grown on Sr₂Nb₃O₁₀perovskite oxide nanosheet at low temperatures

Ho Sung Shin, In Su Kim, Jong Un Woo, Seok June Chae, Bumjoo Kim, Sahn Nahm

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

A Sr2Nb3O10 (SNO) nanosheet was deposited on a Pt/Ti/SiO2/Si (Pt-Si) substrate using the Langmuir-Blodgett technique. An SNO monolayer was used as the seed layer for the growth of a crystalline 0.97(Na0.5K0.5)(Nb0.91Sb0.09)O3-0.03CaZrO3 (NKNS-CZ) thin film at a low temperature of 400 °C. The NKNS-CZ thin film grew along the [001] direction, and it had a dense microstructure with an average grain size of 75 nm. The dielectric constant of the film was 250, with a low dielectric loss of 3.5% at 100 kHz. The leakage current density of the Pt/NKNS-CZ top-electrode interface was approximately 1.3 × 10-6 A/cm2 at 0.05 MV/cm. Additionally, a slightly increased leakage density (8.1 × 10-5 A/cm2 at 0.05 MV/cm) was observed at the NKNS-CZ/SNO/Pt-Si bottom-electrode interface. Hence, the film exhibited relatively good insulating properties. The d33 and d33 × g33 values of the thin film were approximately 270 pm/V and 32.9 pm2/N, respectively. These are the largest d33 and d33 × g33 values reported until now. Therefore, the NKNS-CZ thin film shows excellent piezoelectric properties, and it can be used for fabricating thin-film piezoelectric energy harvesters.

Original language	English
Article number	121903
Journal	Applied Physics Letters
Volume	121
Issue number	12
DOIs	https://doi.org/10.1063/5.0106010
Publication status	Published - 2022 Sept 19

Bibliographical note

Funding Information:
This research was supported by the National R&D Programs through the National Research Foundation of Korea (NRF) funded by ICT (Project no. 2020M3H4A3105596) and a Technology Innovation Program of MOTIE/KEIT grant funded by the Ministry of Trade, Industry & Energy (MOTIE, Korea) (Project No. 20008775, Development of display integrated surface vibration integrated surface vibration and eco-friendly Pb-free piezoelectric materials and application technology].

Publisher Copyright:
© 2022 Author(s).

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/5.0106010

Cite this

@article{bfbfe25be8da48f09fa507f7376de143,

title = "Piezoelectric properties of (Na, K)(Nb, Sb)O3-CaZrO3thin film grown on Sr2Nb3O10perovskite oxide nanosheet at low temperatures",

abstract = "A Sr2Nb3O10 (SNO) nanosheet was deposited on a Pt/Ti/SiO2/Si (Pt-Si) substrate using the Langmuir-Blodgett technique. An SNO monolayer was used as the seed layer for the growth of a crystalline 0.97(Na0.5K0.5)(Nb0.91Sb0.09)O3-0.03CaZrO3 (NKNS-CZ) thin film at a low temperature of 400 °C. The NKNS-CZ thin film grew along the [001] direction, and it had a dense microstructure with an average grain size of 75 nm. The dielectric constant of the film was 250, with a low dielectric loss of 3.5% at 100 kHz. The leakage current density of the Pt/NKNS-CZ top-electrode interface was approximately 1.3 × 10-6 A/cm2 at 0.05 MV/cm. Additionally, a slightly increased leakage density (8.1 × 10-5 A/cm2 at 0.05 MV/cm) was observed at the NKNS-CZ/SNO/Pt-Si bottom-electrode interface. Hence, the film exhibited relatively good insulating properties. The d33 and d33 × g33 values of the thin film were approximately 270 pm/V and 32.9 pm2/N, respectively. These are the largest d33 and d33 × g33 values reported until now. Therefore, the NKNS-CZ thin film shows excellent piezoelectric properties, and it can be used for fabricating thin-film piezoelectric energy harvesters.",

author = "Shin, {Ho Sung} and Kim, {In Su} and Woo, {Jong Un} and Chae, {Seok June} and Bumjoo Kim and Sahn Nahm",

note = "Funding Information: This research was supported by the National R&D Programs through the National Research Foundation of Korea (NRF) funded by ICT (Project no. 2020M3H4A3105596) and a Technology Innovation Program of MOTIE/KEIT grant funded by the Ministry of Trade, Industry & Energy (MOTIE, Korea) (Project No. 20008775, Development of display integrated surface vibration integrated surface vibration and eco-friendly Pb-free piezoelectric materials and application technology]. Publisher Copyright: {\textcopyright} 2022 Author(s).",

year = "2022",

month = sep,

day = "19",

doi = "10.1063/5.0106010",

language = "English",

volume = "121",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - Piezoelectric properties of (Na, K)(Nb, Sb)O3-CaZrO3thin film grown on Sr2Nb3O10perovskite oxide nanosheet at low temperatures

AU - Shin, Ho Sung

AU - Kim, In Su

AU - Woo, Jong Un

AU - Chae, Seok June

AU - Kim, Bumjoo

AU - Nahm, Sahn

N1 - Funding Information: This research was supported by the National R&D Programs through the National Research Foundation of Korea (NRF) funded by ICT (Project no. 2020M3H4A3105596) and a Technology Innovation Program of MOTIE/KEIT grant funded by the Ministry of Trade, Industry & Energy (MOTIE, Korea) (Project No. 20008775, Development of display integrated surface vibration integrated surface vibration and eco-friendly Pb-free piezoelectric materials and application technology]. Publisher Copyright: © 2022 Author(s).

PY - 2022/9/19

Y1 - 2022/9/19

N2 - A Sr2Nb3O10 (SNO) nanosheet was deposited on a Pt/Ti/SiO2/Si (Pt-Si) substrate using the Langmuir-Blodgett technique. An SNO monolayer was used as the seed layer for the growth of a crystalline 0.97(Na0.5K0.5)(Nb0.91Sb0.09)O3-0.03CaZrO3 (NKNS-CZ) thin film at a low temperature of 400 °C. The NKNS-CZ thin film grew along the [001] direction, and it had a dense microstructure with an average grain size of 75 nm. The dielectric constant of the film was 250, with a low dielectric loss of 3.5% at 100 kHz. The leakage current density of the Pt/NKNS-CZ top-electrode interface was approximately 1.3 × 10-6 A/cm2 at 0.05 MV/cm. Additionally, a slightly increased leakage density (8.1 × 10-5 A/cm2 at 0.05 MV/cm) was observed at the NKNS-CZ/SNO/Pt-Si bottom-electrode interface. Hence, the film exhibited relatively good insulating properties. The d33 and d33 × g33 values of the thin film were approximately 270 pm/V and 32.9 pm2/N, respectively. These are the largest d33 and d33 × g33 values reported until now. Therefore, the NKNS-CZ thin film shows excellent piezoelectric properties, and it can be used for fabricating thin-film piezoelectric energy harvesters.

AB - A Sr2Nb3O10 (SNO) nanosheet was deposited on a Pt/Ti/SiO2/Si (Pt-Si) substrate using the Langmuir-Blodgett technique. An SNO monolayer was used as the seed layer for the growth of a crystalline 0.97(Na0.5K0.5)(Nb0.91Sb0.09)O3-0.03CaZrO3 (NKNS-CZ) thin film at a low temperature of 400 °C. The NKNS-CZ thin film grew along the [001] direction, and it had a dense microstructure with an average grain size of 75 nm. The dielectric constant of the film was 250, with a low dielectric loss of 3.5% at 100 kHz. The leakage current density of the Pt/NKNS-CZ top-electrode interface was approximately 1.3 × 10-6 A/cm2 at 0.05 MV/cm. Additionally, a slightly increased leakage density (8.1 × 10-5 A/cm2 at 0.05 MV/cm) was observed at the NKNS-CZ/SNO/Pt-Si bottom-electrode interface. Hence, the film exhibited relatively good insulating properties. The d33 and d33 × g33 values of the thin film were approximately 270 pm/V and 32.9 pm2/N, respectively. These are the largest d33 and d33 × g33 values reported until now. Therefore, the NKNS-CZ thin film shows excellent piezoelectric properties, and it can be used for fabricating thin-film piezoelectric energy harvesters.

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DO - 10.1063/5.0106010

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