TY - JOUR
T1 - Piezoelectric PZT thin-film transformers with a ring-dot structure
AU - Kweon, Sang Hyo
AU - Tani, Kazuki
AU - Kanda, Kensuke
AU - Nahm, Sahn
AU - Kanno, Isaku
N1 - Publisher Copyright:
© 2020 The Japan Society of Applied Physics.
PY - 2020/11/1
Y1 - 2020/11/1
N2 - In this study, we present the design, the modeling, the fabrication, and the characterization of ring-dot type piezoelectric thin-film transformers (PTFTs). The structure of the PTFTs was a simple circular plate of Pb(Zr,Ti)O3 (PZT) thin film on a Si layer with ring-dot top electrodes and it was suspended by four pantograph-shaped bridges. We estimated the performance of the PTFTs by finite-element method simulations. In accordance with the FEM simulation model, PZT thin films were deposited on silicon-on-insulator substrates and microfabricated into PTFTs with ring-dot structures. From the produced devices, an admittance circle measurement was carried out, enabling us to predict performance. The actual output characteristics of the PTFTs were clearly observed at a resonance frequency (f r) of 4.57 MHz. At this point, a voltage gain of 0.22 and a power density of 704 W cm-3 were measured, under a load resistance (R L) of 22 Ω.
AB - In this study, we present the design, the modeling, the fabrication, and the characterization of ring-dot type piezoelectric thin-film transformers (PTFTs). The structure of the PTFTs was a simple circular plate of Pb(Zr,Ti)O3 (PZT) thin film on a Si layer with ring-dot top electrodes and it was suspended by four pantograph-shaped bridges. We estimated the performance of the PTFTs by finite-element method simulations. In accordance with the FEM simulation model, PZT thin films were deposited on silicon-on-insulator substrates and microfabricated into PTFTs with ring-dot structures. From the produced devices, an admittance circle measurement was carried out, enabling us to predict performance. The actual output characteristics of the PTFTs were clearly observed at a resonance frequency (f r) of 4.57 MHz. At this point, a voltage gain of 0.22 and a power density of 704 W cm-3 were measured, under a load resistance (R L) of 22 Ω.
UR - http://www.scopus.com/inward/record.url?scp=85092037655&partnerID=8YFLogxK
U2 - 10.35848/1347-4065/abb4be
DO - 10.35848/1347-4065/abb4be
M3 - Article
AN - SCOPUS:85092037655
SN - 0021-4922
VL - 59
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - SP
M1 - SPPD09
ER -