Planar Hall effect in a single GaMnAs film grown on Si substrate

Jaehyuk Won, Jinsik Shin, Sangyeop Lee, Hakjoon Lee, Taehee Yoo, Sanghoon Lee, X. Liu, J. K. Furdyna

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3 Citations (Scopus)


We carried out systematic planar Hall effect (PHE) measurements on a layer of GaMnAs grown on a Si substrate. The field scans of the planar Hall resistance (PHR) data obtained at 4 K show a transition behavior, which is similar to the magnetization reorientation process often observed in GaMnAs film grown on a GaAs substrate that has both anisotropies along the <100> and the <110> directions. The dependence of the PHR on the applied field direction revealed the presence of an asymmetry between the <100> and the <110> directions in the magnetic energy of the film. The directions of the magnetic easy axes determined by the PHR value at zero field were about 91 away from the <110> directions. The PHR further shows the absence of the difference in the anisotropy between the <110< directions, indicating no preference of magnetic anisotropy for either the [110] or the [1̄10]direction in the GaMnAs grown on a Si substrate.

Original languageEnglish
Pages (from-to)361-364
Number of pages4
JournalJournal of Crystal Growth
Publication statusPublished - 2013


  • Characterization
  • Gallium compounds
  • Magnetic materials
  • Molecular beam epitaxy
  • Semiconducting III-VI materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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