Keyphrases
N-GaN
100%
Schottky Contact
100%
Plasma Treatment
100%
Ni-based
100%
Annealing Treatment
100%
Height Barrier
100%
X-ray Photoemission Spectroscopy
75%
Schottky Barrier Height
75%
Core Level
75%
X Ray Diffraction
50%
Annealing
50%
X-ray Scanning
50%
Scanning Transmission Electron Microscopy
50%
High Efficiency
25%
Ideality Factor
25%
Low Energy
25%
Thermionic Emission
25%
Ni-Au
25%
High Energy
25%
Capacitance-voltage
25%
Interfacial Phase
25%
Interfacial Reaction
25%
Ni2P
25%
Current-voltage Model
25%
Ni2O3
25%
Engineering
Schottky Barrier
100%
Barrier Height
100%
Photoemission
60%
Core Level
60%
Ray Diffraction
40%
Plasma Treatment
40%
Ideality Factor
20%
Combined Effect
20%
Optoelectronic Device
20%
Displayed Result
20%
Physics
Blood Plasma
100%
Photoelectric Emission
75%
Schottky Barrier Height
75%
Transmission Electron Microscopy
50%
X Ray Diffraction
25%
Optoelectronic Device
25%
Thermionic Emission
25%
X-Ray Diffraction
25%
Capacitance-Voltage Characteristics
25%
Material Science
Schottky Barrier
100%
X-Ray Photoelectron Spectroscopy
60%
Annealing
60%
X-Ray Diffraction
40%
Scanning Transmission Electron Microscopy
40%
Capacitance
20%