Abstract
We report on plasma damage-free sputtering of an indium tin oxide (ITO) cathode layer, which was grown by a mirror shape target sputtering (MSTS) technique, for use in top-emitting organic light-emitting diodes (TOLEDs). It is shown that OLEDs with ITO cathodes deposited by MSTS show much lower leakage current (9.2× 10-5 mA cm2) at reverse bias of -6 V as compared to that (1× 10-1 - 10-2 mA cm2 at -6 V) of OLEDs with ITO cathodes grown by conventional dc magnetron sputtering. Based on high-resolution electron microcopy, x-ray diffraction, and scanning electron microscopy results, we describe a possible mechanism by which plasma damage-free ITO films are grown and their application for TOLEDs.
Original language | English |
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Article number | 183503 |
Pages (from-to) | 1-3 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 86 |
Issue number | 18 |
DOIs | |
Publication status | Published - 2005 May 2 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)